IXTQ220N055T Allicdata Electronics
Allicdata Part #:

IXTQ220N055T-ND

Manufacturer Part#:

IXTQ220N055T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 55V 220A TO-3P
More Detail: N-Channel 55V 220A (Tc) 430W (Tc) Through Hole TO-...
DataSheet: IXTQ220N055T datasheetIXTQ220N055T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 430W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FTE transistors, also known as metal-oxide-semiconductor field-effect transistors, are one of the most versatile electronic components available. IXTQ220N055T is one of the more popular FETs with specific features that makes it applicable to many applications. This article will describe the IXTQ220N055T, its application, and its working principle.

IXTQ220N055T Application and Performance

The IXTQ220N055T is a high-performance N-Channel FETs with sharp turn-on device characteristics. It has a very low Rds(on) of 0.09 ohm and a 200V rating for drain source voltage. The maximum current that can be passed through the transistor is 27 A, making it a great choice for applications like motor control, robotics, and power management. The IXTQ220N055T also has a maximum power dissipation of 175W when operated under normal conditions. The transistor is widely used in switching applications, such as LCD/LED lighting, motor control, and valve control.

How Does IXTQ220N055T Work?

FETs are devices that can amplify, switch, and control electricity. IXTQ220N055T is an N-channel type that uses the application of external voltage to the gate terminal to control the flow of current through the transistor. The circuit works on the principle of charge transfer between the gate-source and gate-drain regions. When a voltage is applied to the gate terminal, an electric field is generated between the source and the drain, resulting in an increase in the electric current between them. This current is controlled by varying the voltage across the gate-source and gate-drain regions.

Conclusion

The IXTQ220N055T is a high-performance FETs with sharp turn-on device characteristics that makes it applicable to many applications. It is most commonly used in LCD/LED lighting, motor control, and valve control. This transistor works on the principle of charge transfer between the gate-source and gate-drain regions. The IXTQ220N055T is available in a number of packages, such as D-PAK or TO-220AB, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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