| Allicdata Part #: | IXTQ42N25P-ND |
| Manufacturer Part#: |
IXTQ42N25P |
| Price: | $ 2.43 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 250V 42A TO-3P |
| More Detail: | N-Channel 250V 42A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ42N25P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 2.43000 |
| 10 +: | $ 2.35710 |
| 100 +: | $ 2.30850 |
| 1000 +: | $ 2.25990 |
| 10000 +: | $ 2.18700 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| Series: | PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 84 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTQ42N25P is a type of Field Effect Transistor commonly known as a MOSFET. MOSFETs are often used in analog circuits due to their ability to control the amount of current flowing in a circuit. IXTQ42N25P is a single choice double drain MOSFET with its drain and gate connected to a single chip.
In terms of its application field, IXTQ42N25P is often employed in capacitors, amplifiers, power supply circuits, and in other circuits where fast switching and large input signals are common. Specifically, the IXTQ42N25P is ideal for switching and power management applications thanks to its high voltage rating coupled with its low on-resistance. In addition, the IXTQ42N25P is also suitable for use in inverters and various other signal processing applications.
The main feature of IXTQ42N25P which sets it apart from other MOSFETs is its strong on-resistance. This ensures that the IXTQ42N25P is able to handle high current levels without excessive heat-production. In addition, the IXTQ42N25P also has an excellent cut-off voltage range, making it ideal for use in high-power circuits.
The working principle of the IXTQ42N25P is relatively simple. The gate voltage controls the on/off state of the MOSFET. When the gate voltage is high, the MOSFET is in its on-state, and the drain current can flow freely. However, when the gate voltage is low, the MOSFET is in its off-state and the drain current is blocked.
In addition, the IXTQ42N25P also has some advanced features that make it well-suited for complex applications. For instance, the IXTQ42N25P is only able to operate within a certain range of temperature, enabling it to handle high temperature circuits with ease. Furthermore, the IXTQ42N25P is also able to handle very large input signals, which is ideal for signal processing applications.
In conclusion, the IXTQ42N25P is an excellent choice for a wide range of analog applications. It has a strong on-resistance and is able to handle high current levels without excessive heat-production. In addition, it also has an excellent cut-off voltage range, meaning it can be employed in high-power circuits. Furthermore, the IXTQ42N25P is also able to handle very large input signals, making it ideal for signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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|---|
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