IXTQ72N30T

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The IXTQ72N30T is a high voltage, logic level, N-channel insulated gate field-effect transistor (FET) suitable as a switch or level shifter in power management applications. It has high resistance and very low gate-source threshold voltage and drain-source breakdown voltage ratings. Compared to traditional bi-directional switching components, the IXTQ72N30T offers considerable higher voltage and current ratings.

The IXTQ72N30T is a 600V N-Channel FET, which comes equipped with a trench gate construction. It utilizes a unique advancer cell technology which is capable of delivering higher current capability, lower forward voltage drop and improved reverse body diode performance. The advanced cell technology also limits device thermal stress, thus increasing the device metallurgy life, which is beneficial during operations where a large number of cycles are necessary. The IXTQ72N30T boasts ultra-low gate threshold voltage and drain to source breakdown voltage determinations for 32V for the gate threshold voltage. This is achieved by the use of a dielectric insulator which is sandwiched between the gate and the channel region and is absent in most traditional MOSFETs, thus allowing more current to flow.

The IXTQ72N30T is a single-channel device and enables high speed switching operations with high frequency, thus reducing switching losses. Furthermore, its output impedance is also very low, making it suitable for switching applications requiring higher frequencies. The IXTQ72N30T’s output has a current rating of 8A and a gate to source voltage rating of 40V. It possesses a safe operating area, so that its operation can remain within its safe operating limits, even when supplied with higher input voltages. It also has a low on-state resistance of 77 mΩ capable of supplying high currents, thereby reducing switching time and improving the over all performance of the device.

Since the IXTQ72N30T is a single-channel device, it is suitable for applications where just one circuit is to be switched. Moreover, due to its high current and voltage ratings, it can be successfully employed in power management applications. The IXTQ72N30T can be effectively used for level shifting applications, as its low gate-source threshold voltage and drain-source breakdown voltage limit the stress on the device. Furthermore, its advanced cell technology enables better thermal dissipation and is rendered beneficial where a large number of cycles are necessary.

In sum, the IXTQ72N30T is a high voltage, logic level, N-channel insulated gate field-effect transistor (FET) suitable as a switch or level shifter in power management applications due to its high current and voltage ratings. It comes with trench gate construction, is equipped with advanced cell technology for improved thermal dissipation, and displays an ultra-low gate threshold voltage and drain to source breakdown voltage for 32V for the gate threshold voltage. Its single-channel output makes it suitable for applications where just one circuit is to be switched. Its low on-state resistance enables fast switching operations while its safe operating area limits the device’s operation to prevent any damage.

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