| Allicdata Part #: | IXTQ80N28T-ND |
| Manufacturer Part#: |
IXTQ80N28T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 280V 80A TO-3P |
| More Detail: | N-Channel 280V 80A (Tc) 500W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ80N28T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 49 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 280V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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.IXTQ80N28T Application Field and Working Principle
IXTQ80N28T is a type of Insulated Gate Bipolar Transistor (IGBT). It is a power semiconductor device that combines transistors and semiconductor technology. It is used to switch and regulate high power circuits. Because of IGBTs combining the advantages of both bipolar transistors and field effect transistors (FETs), it can provide the speed of a bipolar transistor and the low on-state voltage of a FET, making it an efficient choice for many applications that require top power handling and control.
Application Field
The IXTQ80N28T IGBT is suitable for a wide range of applications including motor control, solenoid and relay drive, solar power systems, voltage regulation, LV/HV DC conversion, LED lighting systems, all-round industrial power conversion, and consumer electronics. Its split-gate structure offers a lower on-state voltage than MOSFETs and is optimized for fast switching, increased system efficiency, and power density. This makes it the ideal choice for bridgeless high-power pulse-width-modulated (PWM) applications.
Working Principle
The IXTQ80N28T IGBT combines the advantages of both bipolar transistors and FETs. The structure consists of a collector, an emitter and a gate. When a voltage is applied to the gate, the voltage at the junction between the collector and the emitter increases, which allows current to flow from the collector to the emitter. By varying the gate voltage, the current flow can be adjusted. When the gate voltage is set to 0V, the device is in a "off" state and no current can flow. This allows the IGBT to be used as a switch.
The IGBT is an analog device and therefore varies the collector-emitter voltage, making it very efficient in terms of power handling. In addition, the IGBT is capable of very fast turn-on and turn-off times, which makes it suitable for high frequency applications. The IGBT also offers lower power losses due to its lower on-state voltage.
Conclusion
The IXTQ80N28T IGBT is a versatile power semiconductor device that offers high power handling and control for a wide range of applications. Its split-gate structure allows for fast switching, increased system efficiency, and power density which makes it the ideal choice for many applications. Its lower on-state voltage combines with its fast turn-on and turn-off times, making it very suitable for high power applications and high frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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| IXTQ160N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 160A TO-3... |
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| IXTQ200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-3... |
| IXTQ220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-3... |
| IXTQ220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-3... |
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| IXTQ240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-3... |
| IXTQ250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-3... |
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