IXTQ88N30P Allicdata Electronics
Allicdata Part #:

IXTQ88N30P-ND

Manufacturer Part#:

IXTQ88N30P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 88A TO-3P
More Detail: N-Channel 300V 88A (Tc) 600W (Tc) Through Hole TO-...
DataSheet: IXTQ88N30P datasheetIXTQ88N30P Datasheet/PDF
Quantity: 63
Stock 63Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 600W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Transistors are components designed to control current or voltage. The IXTQ88N30P is a single FET (Field Effect Transistor) that uses a low-power gate to control high-power devices. It offers a high power handling ability and is suitable for various power switching applications.

IXTQ88N30P Application Field

The IXTQ88N30P is designed for power switching applications that require a high degree of efficiency, cost efficiency, and safety. It combines an advanced power MOSFET with a low-power control circuit using a dual P-Channel configuration. The IXTQ88N30P is suitable for a variety of applications, such as electric vehicles, power supplies, and industrial inverters, among others. It is also used in motor control applications such as switched reluctance motors and brushless DC motors.

IXTQ88N30P Working Principle

The IXTQ88N30P consists of two P-channel transistors, a current source, and a control circuit. It operates in a single-ended design and is controlled by an external gate voltage supplied by the current source. The dual-channel operation of the device allows it to control two high-power N-channel MOSFETs. When the gate voltage is applied, the IXTQ88N30P turns on one of the two MOSFETs to conduct power while the other is kept off. This arrangement helps reduce power dissipation, improve efficiency, reduce EMI/RFI emissions, and improve power reliability.

The P-channel transistors used by the IXTQ88N30P are connected in parallel and are able to handle much higher current than the N-channel transistors. This makes the IXTQ88N30P ideal for power switching applications that require large amounts of power. The IXTQ88N30P also features integrated gate protection and ESD protection, which helps protect the device from transients, static and electrical fields.

Conclusion

The IXTQ88N30P is a single field effect transistor designed for power switching applications that require high power handling and efficiency. It combines an advanced power MOSFET with a low-power control circuit using a dual P-channel transistor configuration. It also features integrated gate protection and ESD protection, allowing it to safely handle large amounts of power. The IXTQ88N30P is ideal for applications such as electric vehicles, power supplies, industrial inverters, and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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