IXTQ22N50P

Vgs(th) (Max) @ Id:	5.5V @ 250µA
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	350W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2630pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	PolarHV™
Rds On (Max) @ Id, Vgs:	270 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to IXTQ22N50P

The IXTQ22N50P is a power field effect transistor (FET) that belongs to IXYS Corporation\'s 500V family of silicon atomic-level power MOSFETs. It typically features 29.6mΩ resistance at 25°C. This transistor is used to switch high-voltage and high-current levels in several industrial and consumer applications, including power converters, DC-DC converters, power factor correction, high-voltage micro-inverters, and motor drives.

IXTQ22N50P Applications

The IXTQ22N50P can be used in a wide range of applications, such as power converters, DC-DC converters, power factor correction, high-voltage micro-inverters, motor drives, and many others. It provides high frequency, low-distortion and fast-switching capabilities, making it an ideal choice for high-speed switching applications. The IXTQ22N50P is often used in low- and medium-voltage automotive and industrial applications, where it can perform reliably under high-temperature and harsh conditions.The main advantages of using the IXTQ22N50P are its low on-state resistance and low gate charge. The device is also protected against gate oxide breakdown and gate charge blocking, making it reliable for a wide range of applications. Its low output capacitance ensures fast switching speed and low power dissipation. Finally, its high voltage capability of 500V makes it ideal for automotive and industrial applications, where high voltage operation is required.

IXTQ22N50P Working Principle

The IXTQ22N50P is a power MOSFET device that operates on the principle of metal oxide field effect transistor (MOSFET) and works as an enhancement-mode FET. MOSFETs have three terminals, namely the drain (D), gate (G), and source (S). The depletion of electrons in the semiconductor region near the gate causes the device to be in an off-state. To turn it on, electrons must be injected into this region, which is accomplished by applying a voltage on the gate.The voltage applied on the gate creates a field that creates an electrostatic force, which then creates an electric field between the drain and source, causing current to flow. This voltage applied on the gate can be any voltage between the threshold voltage of the device and the breakdown voltage. The amount of current that will flow through the device depends on the gate voltage and is referred to as the transconductance.

Conclusion

In conclusion, the IXTQ22N50P is a power field effect transistor that is used in a wide range of applications, including power converters, DC-DC converters, power factor correction, high-voltage micro-inverters, and motor drives. It achieves its desired output by using the principle of metal oxide field effect transistors (MOSFET) and works by having a voltage applied to its gate, which creates a field that causes current to flow between its drain and source.

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