| Allicdata Part #: | IXTQ182N055T-ND |
| Manufacturer Part#: |
IXTQ182N055T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 55V 182A TO-3P |
| More Detail: | N-Channel 55V 182A (Tc) 360W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ182N055T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 360W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4850pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
| Series: | TrenchMV™ |
| Rds On (Max) @ Id, Vgs: | 5 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 182A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IXTQ182N055T is a type of DMOS FET that is used for switching purposes. It is a field-effect transistor (FET) whose gate is voltage-controlled. To understand its working principle and application field, it is important to know what a DMOS FET is and what a FET is.
What is a DMOS FET?
DMOS stands for ‘dual-gate, metal-oxide-semiconductor’ FET which means that the FET has two gates instead of one. These two gates are electrically isolated, which means that they can be used as both input and output, providing a more sophisticated circuit than a simple FET. The two gates allow the device to act as a variable resistor in which the resistance varies depending on the voltage of the two gates.
What is a FET?
A FET is a transistor that operates by controlling the voltage at its gate terminal. The gate acts as a switch, controlling the current from the drain to source. When the voltage at the gate terminal is increased, it creates an inversion layer which results in higher current from the drain to source. Conversely, when the voltage at the gate terminal is reduced, less current will be drawn from the drain to source.
What is the application field and working principle of IXTQ182N055T?
The IXTQ182N055T is designed to be used as a switch in applications such as motor control, power supplies, and telecom systems. The DMOS FET has a low on-state resistance and a fast switching speed, making it well-suited for these applications. It also has a low capacitance, which reduces signal degradation and allows it to operate at higher frequencies. The working principle of the IXTQ182N055T is based on how a FET operates. The two gates act as a switch, and they can be used to control the current between the source and the drain. When the voltage at the gate is increased, the current from the source to the drain increases, and when it is decreased, the current reduces. This allows for the control of current in the application.
Regardless of the specific application, IXTQ182N055T can be used for switching applications due to its low on-state resistance and fast switching speed. Additionally, its low capacitance minimizes signal degradation and allows for high-frequency operation. In summary, IXTQ182N055T is a DMOS FET that is used for switching purposes, and its working principle is based on the operation of FETs.
The specific data is subject to PDF, and the above content is for reference
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