IXTQ250N075T

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	550W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9900pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	200nC @ 10V
Series:	TrenchMV™
Rds On (Max) @ Id, Vgs:	4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	250A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IXTQ250N075T is a type of insulated-gate field-effect transistor (IGFET) specifically classified as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed for applications in power electronics and systems, and boasts a wide number of features that make it well suited for this purpose. In this article, we will explore the applications of the IXTQ250N075T and how its features give it advantages over other similarly rated FETs. We will also discuss its working principle and how it can be effectively integrated into a variety of projects.The IXTQ250N075T is designed for high-current handling in high-frequency applications such as motor control systems and industrial inverters. It has a sturdy metal case that makes it resistant to shock and vibration, and it is also rated for high power dissipation. This makes it an excellent choice for applications such as motor control, light dimming, and HVAC systems. The IXTQ250N075T can also be used in applications where large amounts of current need to be quickly switched, such as automotive audio systems.The IXTQ250N075T has a dielectric static discharge (ESD) rating of over 1,000V, making it exceptionally resistant to electrical surges. This is an important factor in critical applications, such as aircraft and medical equipment, where sudden power outages or anomalies can cause serious damage to the components. Additionally, the device has a small size, which makes it ideal for circuit boards with limited space.The IXTQ250N075T has an advanced unipolar power switch design that effectively maximizes the available gate bandwidth and minimizes switching losses. This feature, combined with its high current handling, makes it suitable for a wide range of applications, from consumer electronics to industrial motors. Additionally, the IXTQ250N075T is capable of operating on a wide range of voltages, from 4.5V up to 50V, making it suitable for a variety of power supplies.The IXTQ250N075T uses a simple, straightforward approach to give operational control of the device. The gate current, which is typically provided by a microcontroller, is set to a specific voltage to turn the device on or off, while the drain and source terminals can be individually adjusted to change the overall current control. This makes the IXTQ250N075T an ideal choice for applications where precise and reliable control of current is needed.The working principle of the IXTQ250N075T is quite simple. When the gate terminal is given a positive voltage, the device\'s MOS channel becomes narrowed, forming a resistance between the drain and source. This resistance effectively limits the current through the device, making it suitable for applications requiring precise current control. When the gate terminal is forced to a negative voltage, the MOS channel is widened, allowing more current through the device. This feature makes the IXTQ250N075T well suited for applications such as solenoid control, where a wide range of current levels can be controlled with minimal effort.In summary, the IXTQ250N075T is a powerful insulated-gate field-effect transistor (IGFET) that is specifically designed for use in high-current, high-frequency applications. It has a metal case that makes it highly resistant to shock and vibration, along with a wide operating voltage range and strong ESD rating. Additionally, the IXTQ250N075T has a simple and straightforward control system that allows for precise and reliable current control. Together, these features give the IXTQ250N075T a significant advantage over other similarly rated FETs, making it an excellent choice for power electronics projects.

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