| Allicdata Part #: | IXTQ14N60P-ND |
| Manufacturer Part#: |
IXTQ14N60P |
| Price: | $ 2.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 14A TO-3P |
| More Detail: | N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ14N60P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 2.10294 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTQ14N60P is a state of the art vertical power MOSFET designed for switching applications. It is a single n-channel vertical power MOSFET which is capable of blocking voltage up to 600 volts. The IXTQ14N60P has been optimized for use in low to medium voltage and high current applications.
In these types of applications, the IXTQ14N60P can be used as a switch to control the flow of power and current. This makes the IXTQ14N60P a versatile device which can be used in a variety of systems, including automotive and industrial applications. In automotive applications, the IXTQ14N60P can be used to switch power between the engine and the electrical components, while in industrial applications it can be used to control the flow of current to motors and other equipment.
The IXTQ14N60P is based on the vertical MOSFET design. This design consists of a source region, a channel region and a drain region on the same vertical substrate. The channel region is formed by connecting the source to the drain, and the source region and drain region are connected to the gate.
The source and drain regions of the IXTQ14N60P are highly doped with an n-type semiconductor, and the gate is made from an insulated-gate field effect transistor (IGFET) which is highly conductive to electrons. This combination of elements allows the IXTQ14N60P to control the current that flows between the source and the drain by controlling the voltage applied to the gate. In this way, the IXTQ14N60P can be used as a switch, allowing it to control the flow of current in a variety of applications.
The IXTQ14N60P is an efficient device which is capable of handling high currents and voltages. It has a low on-resistance of 0.45 ohm, and is rated for an avalanche energy dissipation of up to 8mJ in accordance with the JEDEC standards. This means that it is suitable for operation in applications that require fast switching, such as in high frequency power systems.
The IXTQ14N60P offers a wide range of features which make it suitable for a variety of applications. It has a fast switching speed of 10nsec, which makes it suitable for use in a wide range of switching applications. It also has a low gate charge of only 6nC. This means that the IXTQ14N60P can switch quickly and efficiently, while allowing for low power consumption.
The IXTQ14N60P is a reliable device which is capable of withstanding high thermal and electrical stresses. It is designed to withstand temperatures of up to 175°C, and is rated for an operating temperature of -55°C to +175°C. This makes it ideal for use in applications that require high reliability and long-term reliability.
In summary, the IXTQ14N60P is a state of the art vertical power MOSFET designed for switching applications. It is capable of blocking high voltages and has a range of features that make it suitable for a variety of applications. Its low on-resistance, fast switching speed and low gate charge allow it to be used efficiently in high frequency power systems. The IXTQ14N60P is a reliable device which is capable of withstanding high electrical and thermal stresses, making it ideal for use in a variety of automotive, industrial and other applications.
The specific data is subject to PDF, and the above content is for reference
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| IXTQ220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-3... |
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