IXTQ52N30P Allicdata Electronics
Allicdata Part #:

IXTQ52N30P-ND

Manufacturer Part#:

IXTQ52N30P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 52A TO-3P
More Detail: N-Channel 300V 52A (Tc) 400W (Tc) Through Hole TO-...
DataSheet: IXTQ52N30P datasheetIXTQ52N30P Datasheet/PDF
Quantity: 138
Stock 138Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 66 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTQ52N30P is a powerful and versatile power MOSFET produced by Infineon. It is a specially designed power MOSFET optimized for low-voltage applications, and is ideal for use in power supplies, motor control, and other power-electronics applications. It is a single-device solution that combines performance advantages such as low gate charge, low threshold voltage, low on-resistance and low input capacitance with a wide safe operating area and fast switching characteristics.

The IXTQ52N30P is specifically designed for operations in high power applications over a wide range of temperatures.It is a safe, reliable, and easy to use device which is suitable for different power control applications. It is an ideal component for high-efficiency switching solutions since it offers superior levels of performance and a wide temperature range. It has excellent thermal performance, available in a fully insulated package and is also featured with 2KV ESD protection on drain and source pins.

The IXTQ52N30P is an N-channel enhancement mode type of MOSFET that is designed with a vertical DMOS structure. This makes it suitable for high-frequency applications, such as DC-DC converters, with its low gate-charge and gate-resistance attributes. It is also appreciated for featuring very quick switching and high operating speed when compared to other similar components.

The device is operated by applying a gate voltage which causes the channel to conduct between the source and drain. It works on the principle of resistance modulation and/or current mode switching. As the gate voltage is increased, the resistance between the source and drain decreases, allowing current to flow from source to drain. This allows the device to be used for power switching, such as high-side power MOSFET switches since the device can be turned on and off with a gate signal.

The IXTQ52N30P is mainly used in a variety of power control applications in the automotive, industrial and consumer electronics industries. Its excellent switch off characteristics and fast access times make it ideal for use as a switch in automotive audio systems, DC-DC converters, lighting circuits, home appliance and solar systems. It is also used in power supplies, battery packs and motor control applications such as brushless DC motor controllers, electronic ignition systems, brake actuators and other electronic power devices.

In summary, the IXTQ52N30P is an N-channel enhancement mode MOSFET that features superior performance, fast switching and wide temperature range with 2KV ESD protection on drain and source pins. It is mainly used for power control applications including high-side power switching, DC-DC converters, automotive systems, battery packs, motor control and home appliance circuits. It is a reliable, high performance and easy to use device that can be used in various power control applications.

The specific data is subject to PDF, and the above content is for reference

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