Allicdata Part #: | IXTQ69N30P-ND |
Manufacturer Part#: |
IXTQ69N30P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 69A TO-3P |
More Detail: | N-Channel 300V 69A (Tc) 500W (Tc) Through Hole TO-... |
DataSheet: | IXTQ69N30P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4960pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 49 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 69A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ69N30P is a part of a certain family of transistors known as Field Effect Transistors (FETs). FETs have several notable advantages over traditional Bipolar Junction Transistors (BJTs), such as lower power consumption, higher frequency operation, and greater noise immunity. They are also much more versatile than BJTs, being able to be configured to switch or act as an amplifier – which opens it up for a whole range of uses. The IXTQ69N30P specifically is a single-ended \'enhancement-type\' MOSFET. This means that it is controlled by a potential applied to the gate and can be used in applications such as amplifiers, switched, and even electrical current sensing.
The IXTQ69N30P is a particularly useful part because of the wide range of applications that it is capable of being used in. It has a programmable on-resistance, which makes it ideal for use as an amplifier, and its low input capacitance makes it suitable for switching circuits as well as high speed digital logic applications. Furthermore, its high linearity, temperature stability, and enhanced ESD protection make it useful for applications requiring reliability and stability. It also has a very low drain-source voltage drop, making it a good choice for applications which require power efficiency. The device has a drain-source breakdown voltage of 30 volts and a max gate-source voltage of -20 volts.
The working principle of the IXTQ69N30P is relatively simple, and relies on something known as \'channel enhancement\' which is intrinsic to the way MOSFETs work. The MOSFET is made up of an insulated gate which can be used to control the current to flow between the source and the drain. When a positive voltage is applied to the gate, it creates an electric field which \'enhances\' the conductive properties of the channel, allowing current to flow between the source and drain. It is this process of channel enhancement which allows the IXTQ69N30P to be used as an amplifier, switch, and digital logic gate.
In conclusion, the IXTQ69N30P is a highly useful component in a wide range of applications, due to its low electrical losses, high linearity, and programmable on-resistance. The device also has a wide operating voltage range and excellent temperature stability, making it a great choice for applications requiring reliability. Furthermore, its working principle is relatively simple, relying on the intrinsic \'channel enhancement\' process which is unique to MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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