Allicdata Part #: | IXTQ82N25P-ND |
Manufacturer Part#: |
IXTQ82N25P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 82A TO-3P |
More Detail: | N-Channel 250V 82A (Tc) 500W (Tc) Through Hole TO-... |
DataSheet: | IXTQ82N25P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 142nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 41A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 82A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ82N25P is a type of field effect transistor (FET) that belongs to the single MOSFET (metal-oxide-semiconductor field-effect transistor) family. This type of device is predominantly used in power switching applications, such as motor control and electronic ballast.This MOSFET is capable of high-voltage, high-current switching applications due to its low gate-source capacitance and low on-state resistance. It also achieves fast switching speeds and low gate charge, making it ideal for applications where power efficiency and fast response time are important. In addition, it is RoHS compliant and has a drain-source breakdown voltage of 600V.The working principle of the IXTQ82N25P is based on the idea of an electrical gate. When a voltage is applied to the gate, a current flows between the drain and source, creating a channel through which device voltage and current can flow. When the gate voltage is removed, the device is turned off and the device is no longer able to conduct current. This type of field-effect transistor works by controlling the current flows based on the voltage applied to the gate.The IXTQ82N25P is designed for use in a variety of switching applications. It can be used in motor control applications such as servo motor and solenoid control, or for controlling actuators and valves. It is also ideal for electronic ballast and LED drivers, as well as power supply converters, high frequency switches, and solar LED drivers.In summary, the IXTQ82N25P is a single MOSFET ideal for power switching applications such as motor control and electronic ballast. It achieves high-voltage, high-current switching, with fast switching speeds and low gate charge, and is RoHS compliant. It functions through the concept of an electrical gate, with the amount of current conducted between the drain and the source depending on the voltage applied to the gate. This MOSFET can be used in a variety of switching applications, from motor control and servo motor control, to power supply converters and solar LED drivers.
The specific data is subject to PDF, and the above content is for reference
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