IXTY02N120P

The IXTY02N120P is a Power Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) developed by IXYS Corporation and distributed by IXYS Integrated Circuits Division. It is an enhancement mode n-channel Power MOSFET designed primarily for low frequency, high-voltage power conversion applications. It is available in a TO-220 package, which is a compact, one-piece insulated metal-base package designed for power semiconductor devices. The IXTY02N120P can be used in commercial, industrial, and military applications.

The standard working principle of a MOSFET is the same as that of a bipolar junction transistor (BJT). A gate voltage is applied to the MOSFET, which controls the current flowing through the device. This is done by creating an electric field in the thin oxide layer between a source and drain region, which allows for the conduction of electrons. Unlike BJTs, which requires a large amount of current to be passed through the device for conduction to occur, MOSFETs require only a small amount of current, resulting in greater efficiency.

The IXTY02N120P is a cooling technology MOSFET and has a drain-source voltage range of 800V. The maximum continuous drain current is 25A and the maximum drain-source on-state resistance is 1.9 ohms. It is housed in a thermally-enhanced TO-220 package which acts to dissipate the heat generated by switching. It has a high transistor threshold voltage and can be used in a variety of applications such as in the motor drives, appliances, power tools, motor control and lighting controlfor its. This device is ideal for use in high- voltage, medium-frequency power conversion applications due to its low RDS(on), high blocking voltage capability and very low gate charge.

MOSFETs are fast switching devices and are also very efficient since they require only a small amount of current to switch a large amount of current. The IXTY02N120P is a high performance MOSFET suitable for applications requiring high voltage, medium-frequency power conversion. With its wide voltage range, low on-state resistance, high blocking voltage capabilities and low gate charge, it can effectively handle the power conversion tasks demanded of it, resulting in improved efficiency and reliability.