Allicdata Part #: | IXTY3N60P-ND |
Manufacturer Part#: |
IXTY3N60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 3A D-PAK |
More Detail: | N-Channel 600V 3A (Tc) 70W (Tc) Surface Mount TO-2... |
DataSheet: | IXTY3N60P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 411pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 9.8nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 2.9 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The IXTY3N60P is a discrete power Field Effect Transistor (FET) component. FETs are a type of transistor and have a wide range of uses, such as in amplifiers, switches and power supplies. As such, the IXTY3N60P is a versatile component and well-suited for use in a range of applications, including automotive, industrial, consumer and communications.
The IXTY3N60P is a depletion-mode MOSFET with a standard drain-source voltage (Vds) of 60V and a standard drain current (Id) of 3A. It also has a maximum gate-source voltage (Vgs) of ± 20V and a maximum power dissipation (Pd) of 7.6W. These parameters indicate the IXTY3N60P is ideal for applications that require medium voltage and current switching.
The IXTY3N60P is also well suited to use as an amplifier, due to its low input capacitance and fast switching speed. Its gate-source capacitance is only 18pF, and its total gate charge is a low 0.5nC. This makes the IXTY3N60P ideal for use in high-speed amplifier circuits, where fast switching times are required. Additionally, the IXTY3N60P has a low maximum gate-drain leakage current of 100nA, which means it is suitable for use in sensitive analog circuits.
The IXTY3N60P works by using the voltage between the gate and the source (Vgs) to effectively "switch off" the voltage between the drain and the source (Vds), allowing for current flow between them. The higher the Vgs voltage, the lower the Vds voltage - effectively allowing current to flow or not flow, depending on the Vgs voltage. This is the principle by which the IXTY3N60P works - and why it is an effective choice for a power switch.
In summary, the IXTY3N60P is a discrete power FET component and an ideal choice for a range of applications, due to its impressive performance capabilities. In particular, its fast switching speed, low input capacitance and low gate-drain leakage current make it well suited to use in high-speed amplifier circuits and analog circuits. The IXTY3N60P works by using the voltage between the gate and the source (Vgs) to switch off the voltage between the drain and the source (Vds), allowing for current flow between them.
The specific data is subject to PDF, and the above content is for reference
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