Allicdata Part #: | IXTY15P15T-ND |
Manufacturer Part#: |
IXTY15P15T |
Price: | $ 1.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 150V 15A TO-252 |
More Detail: | P-Channel 150V 15A (Tc) 150W (Tc) Surface Mount TO... |
DataSheet: | IXTY15P15T Datasheet/PDF |
Quantity: | 1000 |
70 +: | $ 1.63017 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3650pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | TrenchP™ |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The Ixan IXTY15P15T is a high-performance single-gate power FET for applications in industrial, commercial and telecommunications systems. It is specifically designed for use in a wide range of signal processing applications. The IXTY15P15T is an ideal choice for switching and signal conditioning in high performance, low voltage systems.
The IXTY15P15T is a three-terminal field effect transistor (FET) with a single gate. It is composed of a single N-channel MOS (metal oxide semiconductor) oxide-silicon (MOSFET) that is formed by ion implantation in an oxide-silicon substrate. The gate has a highly reliable Schottky diode built into it that is capable of providing high voltage isolation and reliable reverse current conduction.
The IXTY15P15T has a very low on-resistance, which helps to reduce losses and power consumption in applications. This is also coupled with excellent high frequency switching performance for high speed signal processing applications, which is key for modern industrial control and high frequency telecommunication systems. The FET\'s low gate charge and low output capacitance make it ideal for these applications.
The working principle of the IXTY15P15T is based on its ability to control current flow between its source and drain terminals. A voltage applied to its gate terminal controls the conductivity of the N-channel MOSFET, thereby allowing or restricting the current flow between the source and drain terminals, based on whether the gate voltage is positive or negative.
As a result of the low on-resistance and the high breakdown voltage of the IXTY15P15T, it can be used in a variety of applications in industrial, commercial and telecommunications systems. It is well suited for use in switching and signal conditioning applications, as it can be used to control large currents and high voltages with low power consumption. It is also ideal for use in high frequency signal processing applications due to its excellent switching performance and low capacitance.
In addition to its use in switching and signal processing applications, the IXTY15P15T can also be used in power management applications. It can be used to control the supply of voltage to a variety of electronic components, thereby allowing for greater control over the power consumption of a system.
In summary, the IXTY15P15T is an excellent FET for applications requiring low on-resistance, excellent switching performance, low output capacitance and high breakdown voltage. Its versatility allows it to be used in a variety of applications in industrial, commercial and telecommunications systems. Its working principle is based on its ability to control current flow between two different terminals by controlling a voltage applied to its gate terminal.
The specific data is subject to PDF, and the above content is for reference
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