Allicdata Part #: | IXTY1R4N60PTRL-ND |
Manufacturer Part#: |
IXTY1R4N60P TRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 1.4A D-PAK |
More Detail: | N-Channel 600V 1.4A (Tc) 50W (Tc) Surface Mount TO... |
DataSheet: | IXTY1R4N60P TRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 10V |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 25V |
Vgs (Max): | ±30V |
Series: | Polar™ |
Vgs(th) (Max) @ Id: | 5.5V @ 25µA |
Rds On (Max) @ Id, Vgs: | 9 Ohm @ 700mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
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Ixty1R4N60P TRL is an acronym for Thin Film Resistor Logic, a short-channel metal oxide semiconductor field-effect transistor (MOSFET). These transistors are currently popular in the field of digital logic, particularly in the areas of digital circuits, embedded systems, and logic gates. Due to their small size and very low power consumption, Ixty1R4N60P TRL transistors are ideal for use in applications where minimizing the power consumption of the device is of paramount importance.
The thick oxide metal oxide surface that covers Ixty1R4N60P TRL transistors offers a very high level of immunity to noise and very fast switching speeds, making them ideal for use in a wide range of environments, including ones that might expect a higher level of electrical noise. The thin-film polysilicon gate structure of the transistor allows for extremely low threshold voltage levels, down to nearly zero, meaning that the low power application range is even easier to work with. This also provides an overall protection from electrostatic discharge (ESD) damage.
The resistance-voltage relationship of Ixty1R4N60P TRL transistors is mainly determined by the thickness of the oxide layer on the surface. As the resistance of the transistor increases, the current supplied to the device goes down, and vice versa. Furthermore, the junction capacitance is also affected by the materials used in the transistor and their thickness. This makes the device a versatile choice for a wide range of applications.
The Ixty1R4N60P TRL transistor is ideal for use in a number of different applications, from digital logic gates to controlling current and voltage in circuits. In digital logic, the Ixty1R4N60P TRL transistor works in the same way as a field-effect transistor (FET) to provide precise control over inputs and outputs. For example, in logic gates, the transistor will regulate the flow of current through the logic gate in order to produce precise outputs. This is the basis of logic circuits and is an essential part in devices such as DRAM chips, which require precise control over the amount of current produced in order to accurately store data.
The Ixty1R4N60P TRL transistor is also ideal for use in applications where current and voltage control is vital, such as in motor control, lighting, and machine control. Due to the high level of noise immunity and very high switching speed, these transistors are able to precisely regulate the voltage and current levels needed to optimally power motors, lights, and machines in a variety of settings. This is especially useful in cases where the expected environmental conditions may be harsh or unexpected, as the transistor can ensure that the device is powered accurately, regardless of external factors.
The Ixty1R4N60P TRL transistor is an incredibly versatile and robust option for a wide variety of applications. As one of the smallest transistors available, it is incredibly efficient when it comes to power consumption and offers a very high level of noise immunity. The thin-film polysilicon gate structure of the transistor allows for very low threshold voltage levels, and the thick oxide metal oxide surface offers added protection from ESD damage. Ixty1R4N60P TRL transistors are ideal for use in digital logic gates, motor control, lighting, and machine control, making them an ideal choice for use in a wide range of devices.
The specific data is subject to PDF, and the above content is for reference
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