IXTY55N075T Allicdata Electronics
Allicdata Part #:

IXTY55N075T-ND

Manufacturer Part#:

IXTY55N075T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 75V 55A TO-252
More Detail: N-Channel 75V 55A (Tc) 130W (Tc) Surface Mount TO-...
DataSheet: IXTY55N075T datasheetIXTY55N075T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 25µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: TrenchMV™
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 27.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXTY55N075T is a type of field effect transistor that operates either as a depletion-mode and enhancement-mode MOSFET, depending on the area of application. This particular model is single-channel, which means that it has one source, one drain, and one gate electrode that works together to regulate and control the current. This makes it a useful tool for a variety of applications ranging from audio amplification to light control.

The IXTY55N075T is an N-channel enhancement mode field effect transistor that uses a voltage difference between the gate and the source to control the supply current. This allows for applications that require precise control of current or switching. In addition to this, the IXTY55N075T also offers high input resistance and high switching speeds, making it ideal for applications that need to be fast, efficient, and precise.

In terms of its working principle, when voltage is applied to the gate, the IXTY55N075T\'s drain-to-source resistance decreases, thereby allowing current to flow from the source to the drain. This is known as enhancement mode operation. Conversely, if no voltage is applied to the gate, no current will be allowed to pass and thus the device will be in depletion mode. In addition to this, the MOSFET can be operated in either a linear region or a switching region, depending on the specific application.

The IXTY55N075T is primarily used in audio amplifiers, power supplies, switching applications, and light control applications. In audio amplifiers, the IXTY55N075T is used as the output device where its fast switching speeds, low on-resistance, and high input resistance makes for a great performing amplifier. In power supplies, the IXTY55N075T is used as a fast switch to control current flow, allowing for precise current control. In switching applications, the IXTY55N075T’s fast switching speeds and low-threshold voltage makes it a great solution for quickly switching between two circuits. Finally, in light control applications, the IXTY55N075T can be used to precisely control the intensity of a light source, making for a great dimmer or light control switch.

In summary, the IXTY55N075T is an N-channel enhancement mode field effect transistor that operates either as a depletion-mode or an enhancement-mode MOSFET, depending on the area of application. It is used in a variety of applications such as audio amplifiers, power supplies, switching applications, and light control applications. It has a high input resistance and fast switching speeds, making it ideal for applications that require precise and fast operations. Working off the principle of voltage applied to the gate, the IXTY55N075T will allow current to pass through when the voltage is applied and deplete the current when no voltage is applied.

The specific data is subject to PDF, and the above content is for reference

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