Allicdata Part #: | IXTY1N80P-ND |
Manufacturer Part#: |
IXTY1N80P |
Price: | $ 1.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 1A TO-252 |
More Detail: | N-Channel 800V 1A (Tc) 42W (Tc) Surface Mount TO-2... |
DataSheet: | IXTY1N80P Datasheet/PDF |
Quantity: | 1000 |
70 +: | $ 1.14111 |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 14 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTY1N80P is a single N-channel MOSFET Power MOSFET transistor. It is designed to withstand high energy pulses and has improved safe operating area characteristics. IXTY1N80P can be used with various electronic application fields due to its low on-state resistance, fast switching characteristics and high switching temperatures.
The IXTY1N80P application field mainly involves automotive, consumer, industrial and medical applications. It can be used as a switching power device to replace bulky mechanical switches, prevent sparking and arcing, reduce power losses, simplify circuitry, increase safety and lastly, increase reliability. It can also be employed in audio amplifiers, high-power converters, portable appliances, motor control and battery management applications.
The working principle of IXTY1N80P is based on the MOSFET structure. It consists of a specific type of insulated gate, called the Gate Oxide, which is the reason for its high voltage capability. This insulated gate contains a positive-negative couples of bias voltages, which when applied together, create an inversion layer of electrons that conduct current between the source and the drain. The current through the drain is determined by the amount of voltage applied to the gate, making it a voltage-controlled device.
When the voltage is increased to a certain point, it creates an inversion layer of electrons that are strong enough to carry a large current between the source and the drain. This current controlling capacity of the IXTY1N80P is the basis of its applications, when the application requires high current or high voltage switching.
The IXTY1N80P also has various other features like excellent protection against EMI and EMC, thermal stability, and high withstand voltage, that make it suitable for various power applications.
In conclusion, IXTY1N80P is a single N-channel MOSFET transistor with several application fields and its working principle is based on the MOSFET structure. It has high voltage capability, current controlling capacity, EMI/EMC protection, thermal stability and high withstand voltage, which makes it suitable for a variety of power applications in automotive, consumer, industrial and medical applications.
The specific data is subject to PDF, and the above content is for reference
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