| Allicdata Part #: | MMRF1016HR5-ND |
| Manufacturer Part#: |
MMRF1016HR5 |
| Price: | $ 141.95 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 2CH 120V 225MHZ |
| More Detail: | RF Mosfet LDMOS (Dual) 50V 2.6A 225MHz 25dB 125W N... |
| DataSheet: | MMRF1016HR5 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 129.04900 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | LDMOS (Dual) |
| Frequency: | 225MHz |
| Gain: | 25dB |
| Voltage - Test: | 50V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 2.6A |
| Power - Output: | 125W |
| Voltage - Rated: | 120V |
| Package / Case: | SOT-979A |
| Supplier Device Package: | NI-1230-4H |
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The MMRF1016HR5 is a high reliable N-Channel MOSFET commonly used in RF circuits. It has been carefully designed to provide low noise, low power consumption and good thermal stability. MMRF1016HR5 also features superior dynamic range, wide frequency response and reduction in size than its counterparts.
A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of Field Effect Transistor (FET) commonly used to amplify or switch electronic signals. It consists of three terminals – source, gate and drain, and it is operated by applying a voltage to the gate terminal. This causes a change in the conductivity of the channel between the source and the drain, thus controlling the current flowing between the two. The MMRF1016HR5 employs this type of operation, making it suitable for use in RF circuits.
Due to its N-Channel MOSFET design, MMRF1016HR5 offers excellent Noise Figure and noise immunity, as well as a low thermal impedance – an important feature for controlling thermal stability and power consumption. It also allows for a wide frequency response and dynamic range, enabling it to be used in high frequency applications. Additionally, its small size makes it well-suited for use in compact designs.
MMRF1016HR5 offers a range of applications which can benefit from its excellent RF performance. It is commonly used in RF transceivers and switches, as well as Hi-Fi equipment, telecommunications and wireless systems. Its ability to maintain low noise levels and low power consumption makes it an ideal choice for low-noise amplifier circuits and RF power amplifiers. Its high thermal stability and wide frequency response also make it an excellent choice for medical, industrial, and satellite systems.
In conclusion, MMRF1016HR5 is a high reliable N-Channel MOSFET designed for low noise, low power consumption and good thermal stability. It is commonly used in RF transceivers and switches and Hi-Fi systems, telecommunications and wireless systems, as well as medical, industrial, and satellite systems. Its ability to maintain low noise levels and low power consumption makes it an ideal choice for low-noise amplifier circuits and RF power amplifiers. With its wide frequency response, high thermal stability and small size, MMRF1016HR5 is an excellent choice for a variety of RF applications.
The specific data is subject to PDF, and the above content is for reference
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MMRF1016HR5 Datasheet/PDF