Allicdata Part #: | MMRF5015NR5-ND |
Manufacturer Part#: |
MMRF5015NR5 |
Price: | $ 316.66 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF N-CH 125W 50V |
More Detail: | RF Mosfet HEMT 50V 350mA 2.5GHz 16.6dB 125W OM-270... |
DataSheet: | MMRF5015NR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 287.87000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 2.5GHz |
Gain: | 16.6dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 350mA |
Power - Output: | 125W |
Voltage - Rated: | 125V |
Package / Case: | TO-270AA |
Supplier Device Package: | OM-270-2 |
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The MMRF5015NR5 is a basic semiconductor arrangement known as a field effect transistor (FET), which is also referred to as a metal-oxide-semiconductor FET (MOSFET). The MMRF5015NR5 is a low-noise RF MOSFET that has been designed by NXP Semiconductors to be used in a number of applications, such as amplifiers, linearizers, sources and drivers, switches, and voltage and current regulation. The device is suited for operation frequencies ranging from DC up to 5GHz.
A field effect transistor is a three-terminal device and can be used either as a voltage-controlled or a current-controlled device. By controlling either the input voltage or current, the output current or voltage can be changed. The MMRF5015NR5 contains two of these transistors connected together. The element of interest here is the gate, which acts like a capacitive input and connects the two opposite-polarity devices together.
The operation of the MMRF5015NR5 is such that when a voltage is applied between the source and drain of the device, a current flows between them. This current is proportional to the voltage and is referred to as an amplification. The MOSFET also acts as a switch by opening or closing the gate to control the flow of current. When the gate is open, the current can flow freely between the source and drain. When the gate is closed, no current can flow. The two transistors in the MMRF5015NR5 are connected in a common source configuration with the gate acting as the control element.
The device also provides a number of benefits over traditional MOSFETs, such as improved operating temperature range, increased ruggedness, and improved linearity. Additionally, the MMRF5015NR5 provides a lower input voltage noise when compared to some other common MOSFETs, which is advantageous when being used in systems requiring low-noise operation.
The MMRF5015NR5 has a wide range of applications and is used in a variety of RF, microwave and digital electronics systems. It can be used in amplifier, linearizer, source and driver circuits, as well as in voltage and current regulation systems. It is also used in switch circuits, and has the advantage of being able to operate over a wide frequency range. Furthermore, the improved linearity of the device makes it ideal for use in systems that require high levels of accuracy and precision.
In conclusion, the MMRF5015NR5 is a versatile MOSFET device that is capable of performing a wide range of tasks in a number of different applications. It is suited for operation at frequencies up to 5GHz, provides improved linearity and lower noise operation when compared to other MOSFETs, and can be used for amplifier, linearizer, source and driver, switch, voltage and current regulation circuits.
The specific data is subject to PDF, and the above content is for reference
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