Allicdata Part #: | MMRF1012NR1-ND |
Manufacturer Part#: |
MMRF1012NR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 120V 220MHZ |
More Detail: | RF Mosfet LDMOS 50V 30mA 220MHz 23.9dB 10W TO-270-... |
DataSheet: | MMRF1012NR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 220MHz |
Gain: | 23.9dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 30mA |
Power - Output: | 10W |
Voltage - Rated: | 120V |
Package / Case: | TO-270-2 |
Supplier Device Package: | TO-270-2 |
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Introduction
The MMRF1012NR1 is a high performance field-effect transistor (FET) designed for radio frequency (RF) applications. It provides excellent power gain, high input impedance and low output impedance. This device has a wide operating bandwidth and low noise figure performance.
Application Field of MMRF1012NR1
The MMRF1012NR1 is suitable for use in a wide variety of radio frequency (RF) applications such as voltage-controlled oscillators, frequency synthesizers, receivers, transmitters and amplifiers. It is also suitable for use in private mobile radio and cellular systems. It is ideal for use in low-noise, low-power, and high-power amplifier designs.
Working Principle
The MMRF1012NR1 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It works by utilizing a smaller gate voltage to control the flow of current from the drain to the source, in a similar fashion to that of a mechanical switch. The device is composed of a gate, drain, and source, which are placed in between two electrodes. The gate voltage modulates the width of a channel created between the drain and source, allowing current to flow from drain to source. The larger the gate voltage, the wider the channel, and the more current that can flow.
The MMRF1012NR1 is a high-speed device, meaning it can switch at higher frequencies with lower losses than traditional MOSFETs. It is also relatively low-power consuming, which makes it ideal for use in portable or low-power devices. It is extremely reliable, with a significant life span, making it suitable for use in high-reliability and long-life applications. Due to its characteristics, the device is also suitable for use in high-power amplifiers, such as linear and class-D amplifiers.
Conclusion
The MMRF1012NR1 is a high performance field-effect transistor designed for RF applications. It provides excellent power gain and a wide operating bandwidth, with a low noise figure performance and low power consumption. Its robust construction makes it suitable for use in high-reliability and long-life applications, as well as in linear and class-D amplifiers. With such characteristics, the MMRF1012NR1 is a viable device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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