MUN5212DW1T1 Allicdata Electronics
Allicdata Part #:

MUN5212DW1T1-ND

Manufacturer Part#:

MUN5212DW1T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: MUN5212DW1T1 datasheetMUN5212DW1T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Base Part Number: MUN52**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The MUN5212DW1T1 is a product within the Transistors - Bipolar (BJT) - Arrays, Pre-Biased category. It provides a low cost, three-way NPN transistor array ideal for general purpose switching amplifiers and power transistors.

The MUN5212DW1T1 is a pre-biased array of three identical NPN transistors. The pre-biased operation of the array allows the devices to be used immediately, reducing board area and cost dramatically when compared to equivalent discrete implementations of the same devices.

The device offers a high current gain of >300 and high switching speeds. This makes it suitable for use in low-to-high frequency switching and amplifier applications. The type of device is also well suited for switching power transistors, as the pre-biased configuration eliminates the need for external biasing circuitry.

The MUN5212DW1T1 has low operating voltages of 5V, making it ideal for use in low-voltage operation. Its package also has a wide operating temperature range of -40°C to +125°C, making it a reliable choice in industrial and automotive environments.

In terms of physical size, the MUN5212DW1T1 offers a low profile package (MSOP8) which allows for a compact footprint, allowing for better space optimization. The device can also be used in stacked or parallel configurations, which further increases its versatility.

In addition to its electrical capability and physical size, the MUN5212DW1T1 provides a wide variety of applications thanks to its impressive electrical specifications. These include general purpose switching, amplifier and power transistors for use in low to high frequency switching, and motor control applications.

In terms of working principle, the MUN5212DW1T1 consists of three identical NPN transistors in a pre-biased configuration. Each of these transistors is provided with their individual base, collector and emitter ports, which placed together in a pre-biased configuration bring the device to its full functionality. When an input voltage is applied to the transistor array, the current paths between the collector and emitter are enabled, allowing the transistors to work in both directions.

The MUN5212DW1T1 is a low cost, three-way NPN transistor array with a high current gain and wide operating temperature range, making it an ideal choice for industrial, automotive and general purpose switching, amplifier and power transistor applications. Thanks to its pre-biased configuration, the device can be used without external biasing circuitry, resulting in a significant savings in terms of board area and cost.

The specific data is subject to PDF, and the above content is for reference

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