Allicdata Part #: | MUN5331DW1T1G-ND |
Manufacturer Part#: |
MUN5331DW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | MUN5331DW1T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5mA, 10V |
Base Part Number: | MUN53**DW1 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MUN5331DW1T1G is a bipolar junction transistor (BJT) array. It\'s a packaged array of six pre-biased transistors with seven leads, specifically designed for applications that require high input impedance, signal scaling, automatic gain control, switching and current sensing. The MUN5331DW1T1G has a high component count and is used in a variety of applications.
The MUN5331DW1T1G pre-biased transistor array offers a controlled DC current level and features low saturation voltage, high input impedance and high gain, allowing easy integration into various circuitry. It has a low leakage current ratio that provides a low current level, so it can be used in low power applications. Additionally, the MUN5331DW1T1G offers a low power dissipation and has an integrated NPN array that is designed to reduce power dissipation. The MUN5331DW1T1G can be used in source, drain and gate-drive applications, as well as for signal isolation.
The MUN5331DW1T1G is used in a variety of different applications, including switching power regulators, Class D audio amplifiers, DC-DC converters, backlighting control and LED drivers. In switching power regulators, it is used to control the switching of power transistors. For Class D audio amplifiers, it is used to bias the gate of the power transistors, so it can provide a gate drive signal for the power transistors. In DC-DC converters, it is used to control the power flow between the various stages of the circuit. In backlighting control and LED drivers, it is used to regulate the output current and control the brightness of the LEDs.
The MUN5331DW1T1G is a pre-biased transistor array, which means it allows for low current drain and can be used in a wide range of applications. The transistors in the array are turned on and off using the input signals from a circuit, and the output of the array is regulated by the current in the input signals. The transistors in the array are also carefully connected together, so that a current flow can be regulated and the input and output of the array can be balanced, allowing for a more efficient working environment.
The MUN5331DW1T1G pre-biased transistor array is a popular choice in the industry, as it has a wide range of uses and a low current drain. It is easy to integrate into circuits and offers low power dissipation and improved noise immunity. Additionally, its high input impedance, high gain and low saturation voltage make it ideal for applications that require signal scaling and current sensing. As it is pre-biased, it is also able to offer low current levels, so it can be used in low power applications.
The specific data is subject to PDF, and the above content is for reference
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