NGTB03N60R2DT4G Discrete Semiconductor Products

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The NGTB03N60R2DT4G is a single IGBT that comes from an innovative 1.7 kV series from STMicroelectronics. This IGBT features simplified driving requirements, a low switching loss and a space-saving package all without compromising the performance of the device. As such, this particular IGBT device is ideal for applications that require high-frequency switching, such as inverters, and DC-DC converters. As one of the most efficient and space-saving IGBTs in its series, the NGTB03N60R2DT4G is an ideal choice for a variety of power applications.IGBTs are semiconductor devices that are made up of a two-terminal PN junction and two layers of electrodes, known as the Emitter and Collector. IGBTs combine the low on-state voltage drop of a MOSFET, which is a unipolar power transistor, with the high-current carrying capabilities of a bipolar transistor. This makes them both power efficient and ideal for high-current applications. In the case of the NGTB03N60R2DT4G, the transistor includes a dynamic dV/dt immunity that helps protect against overvoltage and short-circuit conditions.The NGTB03N60R2DT4G has a low gate charge, which makes it easier to drive and reduces the switching losses of the IGBT. Additionally, the IGBT has a 600V blocking voltage, a 32A continuous current rating and an on-state voltage of 1.9V. It also has a compact and reliable TO-252 package, which helps to keep PCB space requirements minimal.To understand the working principle of the NGTB03N60R2DT4G, it is important to understand how IGBTS work. An IGBT is basically a combination of a MOSFET and bipolar junction transistor that uses a charge carrier between two electrodes to control the current flow. When the gate is given a negative signal the IGBT is turned on, thus allowing current to flow. Similarly, when the gate receives a positive signal the IGBT is turned off and the current flow stops.The NGTB03N60R2DT4G IGBT is mainly used in industrial motor drives, home appliance drives, lighting control systems, switching power supplies and automotive applications. In terms of performance, the IGBT is capable of switching frequencies up to 20 kHz and has a Rise time of 6 to 25 ns, making it an ideal choice for applications that require high-frequency switching.In conclusion, the NGTB03N60R2DT4G is an innovative single IGBT device from STMicroelectronics that is designed to be both efficient and space-saving. Featuring a low on-state voltage drop and a high-current carrying capability, the device is ideal for a variety of power applications. With its low gate charge, the NGTB03N60R2DT4G also makes it easier to drive and reduces switching losses. Furthermore, with its 600V blocking voltage and 32A continuous current rating, the IGBT is suitable for a range of applications that require high-frequency switching.

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