NGTB15N60S1EG Discrete Semiconductor Products |
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Allicdata Part #: | NGTB15N60S1EGOS-ND |
Manufacturer Part#: |
NGTB15N60S1EG |
Price: | $ 1.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 30A 117W TO220-3 |
More Detail: | IGBT NPT 600V 30A 117W Through Hole TO-220 |
DataSheet: | NGTB15N60S1EG Datasheet/PDF |
Quantity: | 590 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 0.98280 |
10 +: | $ 0.87822 |
100 +: | $ 0.68468 |
500 +: | $ 0.56559 |
1000 +: | $ 0.44651 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 30A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 15A |
Power - Max: | 117W |
Switching Energy: | 550µJ (on), 350µJ (off) |
Input Type: | Standard |
Gate Charge: | 88nC |
Td (on/off) @ 25°C: | 65ns/170ns |
Test Condition: | 400V, 15A, 22 Ohm, 15V |
Reverse Recovery Time (trr): | 270ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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Transistors - IGBTs - Single
The NGTM15N60S1EG device is a single IGBT which is mainly used in applications that include high-frequency switching, motor control and power factor correction (PFC). It has an insulation voltage of 600V, a collector current of 15A, and a turn-on/turn-off speed of 200ns/200ns. With a wide area of application, the NGTM15N60S1EG device can be used in Panasonic’s IGBT modules and Stand-Alone IGBT products.
Working Principle
The NGTM15N60S1EG device is a single IGBT, which works based on the process of injecting minority carriers into the base region. When a positive voltage is applied to the gate terminal and the gate-emitter threshold voltage is exceeded, electrons are injected into the base region. Since there are no mobile hole-carrier gases, the majority carriers (holes) of the p-type epitaxial layer, which is on the top of the n-epitaxial layer, are injected into the n-epitaxial layer under the influence of the depletion layer in the gate. The injected electrons and holes combine in the depletion layer and the conductivity between the collector and emitter is enhanced. This is called the conductive state, and the current flows between the collector and emitter. When the gate voltage is reverse biased, any minority current is interrupted and the conduction between the collector and emitter is decreased until it falls to zero. This state is called Cut-Off, and this is how the single IGBT works.
Applications
The NGTM15N60S1EG device is mainly used in various applications, including motor control, power factor correction (PFC), and high frequency switching. The device is used in motor speed and torque control, such as brushless DC motors, three-phase BLDC motors, and four-phase BLDC motors. Moreover, this device can be used to implement low-loss PFC and Phase-Shifted Full-Bridge (PSFB) LLC resonant converters. When it comes to high frequency switching applications, the NGTM15N60S1EG can be used in boost PFC converters and half-bridge/full-bridge LLC Power Conversion Systems.
The specific data is subject to PDF, and the above content is for reference
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