NGTB15N60S1EG Allicdata Electronics

NGTB15N60S1EG Discrete Semiconductor Products

Allicdata Part #:

NGTB15N60S1EGOS-ND

Manufacturer Part#:

NGTB15N60S1EG

Price: $ 1.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 30A 117W TO220-3
More Detail: IGBT NPT 600V 30A 117W Through Hole TO-220
DataSheet: NGTB15N60S1EG datasheetNGTB15N60S1EG Datasheet/PDF
Quantity: 590
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 0.98280
10 +: $ 0.87822
100 +: $ 0.68468
500 +: $ 0.56559
1000 +: $ 0.44651
Stock 590Can Ship Immediately
$ 1.09
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Power - Max: 117W
Switching Energy: 550µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 88nC
Td (on/off) @ 25°C: 65ns/170ns
Test Condition: 400V, 15A, 22 Ohm, 15V
Reverse Recovery Time (trr): 270ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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Transistors - IGBTs - Single

The NGTM15N60S1EG device is a single IGBT which is mainly used in applications that include high-frequency switching, motor control and power factor correction (PFC). It has an insulation voltage of 600V, a collector current of 15A, and a turn-on/turn-off speed of 200ns/200ns. With a wide area of application, the NGTM15N60S1EG device can be used in Panasonic’s IGBT modules and Stand-Alone IGBT products.

Working Principle

The NGTM15N60S1EG device is a single IGBT, which works based on the process of injecting minority carriers into the base region. When a positive voltage is applied to the gate terminal and the gate-emitter threshold voltage is exceeded, electrons are injected into the base region. Since there are no mobile hole-carrier gases, the majority carriers (holes) of the p-type epitaxial layer, which is on the top of the n-epitaxial layer, are injected into the n-epitaxial layer under the influence of the depletion layer in the gate. The injected electrons and holes combine in the depletion layer and the conductivity between the collector and emitter is enhanced. This is called the conductive state, and the current flows between the collector and emitter. When the gate voltage is reverse biased, any minority current is interrupted and the conduction between the collector and emitter is decreased until it falls to zero. This state is called Cut-Off, and this is how the single IGBT works.

Applications

The NGTM15N60S1EG device is mainly used in various applications, including motor control, power factor correction (PFC), and high frequency switching. The device is used in motor speed and torque control, such as brushless DC motors, three-phase BLDC motors, and four-phase BLDC motors. Moreover, this device can be used to implement low-loss PFC and Phase-Shifted Full-Bridge (PSFB) LLC resonant converters. When it comes to high frequency switching applications, the NGTM15N60S1EG can be used in boost PFC converters and half-bridge/full-bridge LLC Power Conversion Systems.

The specific data is subject to PDF, and the above content is for reference

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