Allicdata Part #: | NGTB40N120L3WGOS-ND |
Manufacturer Part#: |
NGTB40N120L3WG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 160A TO247 |
More Detail: | IGBT Trench Field Stop 1200V 160A 454W Through Hol... |
DataSheet: | NGTB40N120L3WG Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Switching Energy: | 1.5mJ (on), 1.5mJ (off) |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 86ns |
Test Condition: | 600V, 40A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 18ns/150ns |
Gate Charge: | 220nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 454W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 160A |
Current - Collector (Ic) (Max): | 160A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Introduction
NGTB40N120L3WG is a single IGBT device that provides switching performance and long-term reliability for power conversion applications. In this article we will look at the application field and working principle of NGTB40N120L3WG.
Application Field
NGTB40N120L3WG can be used in a variety of applications where high power conversion efficiency is the main priority. These include wind turbines, solar inverters, motor drives, power supplies, welding machines, battery chargers, and lighting ballasts. It is also suitable for light rail transportation systems, electric vehicles, and power distribution.
The device also offers a low switching loss, which makes it ideal for applications that require high current switching, such as power management. This makes it perfect for use in industrial control systems, as well as control systems in buildings and residences.
Working Principle
The working principle of NGTB40N120L3WG is based on the use of insulated-gate bipolar transistors (IGBTs). An IGBT is a type of transistor that is created by combining two different types of semiconductor devices, one of which is an insulated-gate field-effect transistor (IGFET) and the other is a bipolar transistor. This allows for both unipolar and bipolar characteristics.
When the gate voltage of an IGBT is raised, the resistance between the collector and emitter starts to decrease, which allows for current to flow through. When the gate voltage is reduced, the resistance between the collector and emitter increases, which stops current from flowing through. This allows the IGBT to act as either an electronic switch or a variable resistor.
The NGTB40N120L3WG was designed with high current capability in mind and is able to support up to 40A of peak current. The device also has a maximum voltage rating of 1200V, which allows it to be used in high power applications.
Conclusion
In conclusion, NGTB40N120L3WG is a single IGBT device that offers high power conversion efficiency and long-term reliability in a variety of application fields. It is suitable for light rail transportation, welding machines, battery chargers and more due to its low switching and on-state losses. The device is designed with high current capability and has a maximum voltage rating of 1200V, allowing it to be used in high power applications.
The specific data is subject to PDF, and the above content is for reference
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