Allicdata Part #: | NTD4805N-35G-ND |
Manufacturer Part#: |
NTD4805N-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 12.6A IPAK |
More Detail: | N-Channel 30V 12.7A (Ta), 95A (Tc) 1.41W (Ta), 79W... |
DataSheet: | NTD4805N-35G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.41W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2865pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 11.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 12.7A (Ta), 95A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD4805N-35G is an advanced field effect transistor (FET) utilized for a range of applications, including high-power switching, switching circuits, small signal switching, power converters, and amplifiers. This product is produced by the renowned American semi-conductor manufacturer, STMicroelectronics. It is a single N-channel, enhancement mode power transistor in a leadless package.
The NTD4805N-35G is available in two packages: standard and low-profile. Its features include low on-resistance, high-current operations, protection against ESD (electrostatic discharge), improved junction temperature capability and very low gate charge. This FET has superior performance and flexible control over complex switching events for applications with tight operating margins. The NTD4805N-35G operates at a wide input voltage range of up to 35V and offers a peak output current of 2.5A. This device is also designed to operate with a wide temperature range of -55°C to +150°C and is ideal for high-temperature applications.
The working principle of the NTD4805N-35G FET is based on the passage of current across a metal-oxide semiconductor field effect (MOSFET) structure. This works by applying a voltage to its control or "gate" electrode to control conductivity along the channel between its source and drain electrodes. When the gate voltage is applied, a potential barrier is created which prevents current from flowing. When the voltage increases, more electrons are attracted to the gate electrode, which reduces the opening at the drain and increases the opening at the source. This makes the device more conductive allowing current to flow.
The NTD4805N-35G is widely used for a variety of custom-engineered switch designs, power supplies, solid state lighting, and high-performance low-noise amplifiers. It is also used in home appliances, toys, automotive systems, portable devices, and computers. This FET is ideal for applications where a high-performance, small-form-factor device is required.
The NTD4805N-35G is a reliable and versatile FET which provides an excellent balance between performance, cost, and form factor. Its rugged design and high levels of reliability make it suitable for a wide variety of applications where accurate switching, low on-resistance, and low gate charge are required. With its wide input voltage range, high current capacity, and improved junction temperature, this device is an excellent choice for high-performance switching circuits and small-signal switching.
The specific data is subject to PDF, and the above content is for reference
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