NTD4855N-1G

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NTD4855N-1G is the type number of an N-channel enhancement mode field effect transistor (FET). NTD4855N-1G is specified for applications that require a high power density, such as motor control and switching regulators. NTD4855N-1G is an ideal device for high frequency and high current power amplifier applications due to its low source-drain capacitance.

NTD4855N-1G is a single N-Channel enhancement mode MOSFET, which is based on the structure of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). MOSFETs are commonly used for power switching purposes because of their low on-state resistance, high switching speed and ease of use.

The NTD4855N-1G MOSFET has a maximum drain-source voltage of 30volts, a maximum drain current of 1amp, and a maximum power dissipation of 3.5watts. It is available in a TO-220 package with a low-profile design for low parasitic capacitance. The NTD4855N-1G is designed for a wide range of applications, such as motor control, switching regulators, and power amplifiers.

The basic working principle of a MOSFET is that it operates as a voltage controlled device. The drain-source voltage (VDS) is the driving force for the transistor. By controlling the gate voltage (VG), the amount of current can be varied between a low, cutoff state and a high, saturation state depending on the polarity of the applied gate voltage.

At low gate voltages, the MOSFET is in cutoff and the current through the source to drain path is close to zero. When the gate voltage is increased, the current increases. The source-drain current can be further increased by increasing the drain-source voltage. When the drain-source voltage reaches its maximum and the gate voltage is increased further the MOSFET enters saturation, and the current increases exponentially in this state.

In addition to its high power density, NTD4855N-1G also features low on-state resistance and low gate input capacitance. The low on-state resistance reduces conduction losses, enabling a more efficient operation in power switching applications, while the low gate input capacitance allows high frequency operation and reduces switching times. NTD4855N-1G is also protected against reverse or transient gate voltages.

In conclusion, NTD4855N-1G is a single N-Channel enhancement mode MOSFET that is ideal for high frequency and high current power amplifier applications. It features a maximum drain-source voltage of 30volts, a maximum drain current of 1amp, and a maximum power dissipation of 3.5watts. It is available in a TO-220 package with a low-profile design for low parasitic capacitance and is protected against reverse or transient gate voltages. Additionally, the NTD4855N-1G features low on-state resistance and low gate input capacitance which provides high frequency operation and reduces switching times.

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