Allicdata Part #: | NTD4809NH-35G-ND |
Manufacturer Part#: |
NTD4809NH-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 9A IPAK |
More Detail: | N-Channel 30V 9.6A (Ta), 58A (Tc) 1.3W (Ta), 52W (... |
DataSheet: | NTD4809NH-35G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2155pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 9.6A (Ta), 58A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD4809NH-35G is a low-voltage enhancement mode MOSFET device, which falls under transistors, FETs, MOSFETs, and single types. It is a part of a family of NFETs with single, parallel gate, and logic level performance that delivers superior switching performance for a variety of power management applications. This device has a wide array of uses, and usually consists of a single component with a variety of features.
The NTD4809NH-35G construct consists of a source, gate and drain, which have the ability to pass and control the flow of current through the device. It is designed to provide efficient switching performance and fast turn-off time. Additionally, it has low gate drive power requirements, which makes it suitable for a wide range of applications, including switching regulators and converters.
The NTD4809NH-35G works by a process known as “Voltage Modulated Inversion”. In a low-voltage application, this process utilizes the differential between the applied voltage and the threshold voltage to determine how much the device should turn on or off. When the voltage applied is higher than the threshold voltage, the transistor turns on, and current is passed through the device. Conversely, when the voltage is lower than the threshold voltage, the transistor turns off, thus stopping the flow of current. The device is designed to be small in size and low on power, and is therefore ideal for many power management applications.
In terms of the NTD4809NH-35G application field, it is suitable for use in switching regulators, DC-DC and AC converters, automotive systems, consumer appliances, and other power management applications. The device’s features make it more suitable for use in low-voltage applications as opposed to higher voltage, such as those found within automotive systems. In automotive systems, it is usually used to control the speed and power output of a motor or engine. In consumer appliances, it is suitable for use within comfort and safety systems, motor controls, and lightings.
In conclusion, the NTD4809NH-35G is a low-voltage enhancement mode MOSFET device, falling under the transistors, FETs, MOSFETs, and single categories. It is a part of a family of NFETs with single, parallel gate, and logic level performance that delivers superior switching performance for a variety of power management applications. It utilizes a process known as “Voltage Modulated Inversion” to determine the amount of current allowed to pass through the device, and is suitable for use in a variety of applications, such as switching regulators, DC-DC and AC converters, automotive systems, consumer appliances, and other power management applications.
The specific data is subject to PDF, and the above content is for reference
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