NVMFD5483NLWFT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	6.4A
Rds On (Max) @ Id, Vgs:	36 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	23.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	668pF @ 25V
Power - Max:	3.1W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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Introduction

NVMFD5483NLWFT3G transistors are one type of field-effect transistor (FET) technology known as a Metal-Oxide-Semiconductor FET (MOSFET). MOSFETs have become increasingly popular for their excellent performance characteristics, including high performance, low power consumption, and low voltage operation. This article will explore the application fields and working principle of NVMFD5483NLWFT3G transistors.

Application Fields

NVMFD5483NLWFT3G transistors are typically used in a wide range of electronic applications, such as power management, automotive electronics, high frequency switching, motor control, and energy storage systems. These transistors are especially suitable for applications which require low voltage operation due to their excellent power efficiency and robustness.For high frequency switching applications, NVMFD5483NLWFT3G transistors are often used due to their excellent frequency response and fast switching speed. They are also suitable for applications with high current loads such as motor control and energy storage systems, as they can provide large current carrying capabilities and high on-state resistance.

Working Principle

NVMFD5483NLWFT3G transistors operate in a very similar manner to an insulated gate bipolar transistor (IGBT). In an IGBT, the gate of the transistor works as a switch, allowing or disallowing the flow of current from the collector of the transistor to the emitter. Similarly, in a MOSFET, the gate of the transistor works as a switch, but also acts as an insulation layer between the source and drain of the device.When a voltage signal is applied to the gate of the NVMFD5483NLWFT3G, it creates an electric field which attracts charge carriers from inside the channel of the MOSFET. This charges the gate of the MOSFET and makes it conductive, allowing current to flow from the source of the MOSFET to the drain. When the gate voltage is removed, the charge carriers in the MOSFET\'s channel are no longer attracted to the gate, and the MOSFET returns to its non-conductive state.In addition to the standard single MOSFET, NVMFD5483NLWFT3G transistors are also available in an array of devices. The array configuration enables a single device to act as a switch for multiple channels. This increases the speed and efficiency of circuit operations, as the channels are able to work in parallel without any loss of performance. This type of arrangement is often found in automotive electronics, where multiple channels need to be switched quickly and efficiently.

Conclusion

NVMFD5483NLWFT3G transistors are a popular type of MOSFET commonly used in a wide range of electronic applications. Their excellent performance characteristics and low voltage operation make them ideal for applications such as power management, automotive electronics, high frequency switching, motor control, and energy storage systems. They are also available in array configurations, allowing them to switch multiple channels in parallel for increased speed and performance.

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