Allicdata Part #: | NVMFS5C670NLWFT1G-ND |
Manufacturer Part#: |
NVMFS5C670NLWFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 71A SO8FL |
More Detail: | N-Channel 60V 17A (Ta), 71A (Tc) 3.6W (Ta), 61W (T... |
DataSheet: | NVMFS5C670NLWFT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 61W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.1 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 71A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C670NLWFT1G is a single field-effect transistor (FET) and is a type of power MOSFET (metal oxide semiconductor field effect transistor). It is utilized in various applications, including energy saving and conversion, automotive, power switching, audio, communications and industrial areas.
NVMFS5C670NLWFT1G is designed to regulate current when switching load, and is widely used in DC/DC converters and motor drivers. Its relatively low on-resistance enables efficient converter designs, permitting for a high peak current to the load despite the lower device on-resistance. NVMFS5C670NLWFT1G’s power dissipation and thermal characteristics make it ideal for high-volume applications where space is at a premium. This device also features a built-in Zener diode structure to prevent voltage transients.
NVMFS5C670NLWFT1G can be used in pulse switching applications such as DC/DC converters, motor drivers and H-bridge circuits, where current is switched on and off at regular intervals. It can also be used in power supplies to reduce over current. Moreover, it can be used to protect devices from short circuits.
NVMFS5C670NLWFT1G works on the principle of the MOSFET, where positive gate voltage attracts electrons from the drain to the source, increasing the conductivity. At the same time, the negative gate voltage does not allow the electrons to pass, decreasing the conductivity. This principle is used for power switching applications, enabling current to be switched on and off quickly and efficiently.
NVMFS5C670NLWFT1G’s built-in Zener diode structure helps prevent voltage transients, allowing for a more stable power supply. This device also features low gate-to-drain charges and an ultrafast switching speed, which make it suitable for high-side switching applications. It also features a wide drain-source voltage range, making it well-suited for a range of power supply voltages and currents.
In summary, NVMFS5C670NLWFT1G is a high performance FET that can be used in a variety of applications in energy saving and conversion, automotive, power switching, audio, communications and industrial areas. It features low gate-to-drain charges, an ultrafast switching speed, wide drain-source voltage range and built-in Zener diode structure.
The specific data is subject to PDF, and the above content is for reference
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