NVMFS5C404NWFT1G

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The NVMFS5C404NWFT1G FET is an N-Channel MOSFET of the single type and is 5V calibrated. It can be used for a wide variety of applications, such as power management, audio amplification, and H-bridge motor control.

A FET is an unipolar transistor and is a three-terminal semiconductor device with two gate terminals. The gate terminal controls the conductivity between the source and the drain terminals by varying the voltage applied to the gate terminal. Unlike a BJT, no current flows through the gate, so the gate is insulated from the source and drain, making the FET an ideal choice for many applications.

The NVMFS5C404NWFT1G has an energy efficient on-resistance of 0.6Ω and an 8 V drain-source voltage. It can also operate in environments with temperatures up to 150°C. It has a low gate charge of 14 nC and a maximum gate-source voltage of +-20 V. This makes it ideal for high voltage applications which require a robust device to handle the high voltages.

The device utilizes a vertical channel construction which provides a low gate resistance and a low input capacitance. This ensures the device operates reliably over voltage and temperature ranges. At lower drain-source voltages, the NVMFS5C404NWFT1G delivers greater than average efficiency. With a maximum drain current of 15A, this device is ideal for efficient power management solutions.

The working principle of the NVMFS5C404NWFT1G is simple. When a voltage is applied to the gate terminal, it induces a current in the channel. This current causes a change in the voltage drop across the drain-source terminals which can be used to switch the device on and off. The device has a low gate charge which reduces power consumption, resulting in more efficient operation. The NVMFS5C404NWFT1G is also fast switching which enables it to respond quickly to inputs.

In conclusion, the NVMFS5C404NWFT1G is a single FET that is energy efficient, fast switching, and has a low gate charge. It is suitable for a variety of power management applications. It has a vertical channel construction which ensures reliable operation over voltage and temperature ranges. It has an on-resistance of 0.6 Ω and an 8 V drain-source voltage, making it ideal for high voltage applications. This device is an excellent choice for efficient power management solutions.

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