Allicdata Part #: | NVMFS5C404NWFT3G-ND |
Manufacturer Part#: |
NVMFS5C404NWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 49A SO8FL |
More Detail: | N-Channel 40V 53A (Ta), 378A (Tc) 3.9W (Ta), 200W ... |
DataSheet: | NVMFS5C404NWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 128nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 0.7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Ta), 378A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C404NWFT3G transistor is a monolithic and functional single FET (Field Effect Transistor) of the NVMFS type and is used in a variety of industrial applications, including switching, amplifying, and other applications requiring an efficient, controllable and reliable semiconductor device. It is relatively small in size, providing convenience in handling and good thermal dissipation.
The NVMFS5C404NWFT3G is a high voltage, low-power JFET (Junction Field Effect Transistor) and is available in two different versions – a low speed (NVMFS5C404NWFT3G1) and a high speed (NVMFS5C404NWFT3G2). Both types feature low-on resistance, excellent thermal stability and high breakdown voltage. The NVMFS5C404NWFT3G is available in both through-hole and surface mount packages, allowing excellent mechanical stability.
The NVMFS5C404NWFT3G is constructed with two sets of back-to-back insulation layers, which provide full breakdown capability. This reduces the risk of short circuits and increases the device\'s longevity. The two-stage construction also allows for the inclusion of both p-type and n-type junctions, allowing for a wider range of control. The complementary metal-oxide semiconductor (CMOS) process used to manufacture the NVMFS5C404NWFT3G is optimized to reduce power consumption, giving the device good power efficiency.
The main working principle of the NVMFS5C404NWFT3G is that of a traditional junction FET. This type of transistor works by utilizing an electric field to control the flow of electrons through the transistor. By using an n-type and p-type junction to form a diode, current is able to travel through the device when a voltage is applied to the gate. The amount of current that can travel through the device is determined by the gate voltage. As the gate voltage increases, the drain-source current is also increased. When the gate voltage reaches its maximum value, the device is in its "saturation" state, allowing a maximum amount of current to travel through.
Applications of the NVMFS5C404NWFT3G include analog switches, voltage regulators, motor controller circuits and audio amplifier circuits. In these types of applications, the device is used to provide a variable current or resistance level, while still providing a reliable and low-power control mechanism. In some applications, such as voltage regulation and audio amplifications, the device is configured to amplify or reduce the voltage of a signal.
The NVMFS5C404NWFT3G is a preferred option for many industrial applications due to its low on-resistance and high breakdown voltage. In addition, its low power consumption and small size make it an ideal option for portable or confined spaces. With its high reliability and efficient operation, the NVMFS5C404NWFT3G is a reliable, cost-effective and efficient solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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