NVMFS5C628NLWFAFT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVMFS5C628NLWFAFT1G is the model name of a Field-Effect Transistor (FET). A FET is a type of transistor in which current is controlled by an electric field within a physical channel that connects its source and drain terminals. Common FETs include metal-oxide-semiconductor FETs (MOSFETs), junction FETs (JFETs) and insulated-gate FETs (IGFETs). NVMFS5C628NLWFAFT1G belongs to a type of MOSFET known as a Single FET.

A NVMFS5C628NLWFAFT1G is used primarily to amplify or switch electronic signals. It is composed of five layers: a body layer, a gate layer, a source layer, a drain layer, and a back gate layer. The body layer is composed of a solid-state substrate material, typically silicon or gallium nitride, that is connected to the gate layer. The gate layer is composed of an electrically conductive material (typically polysilicon or metal), and is connected to the source and drain layers. The source and drain layers are composed of highly conductive materials, such as doped silicon, and are connected to the body layer. Finally, the back gate layer is connected to the body layer and serves as an electrical contact between the body and the gate layers.

The working principle of a NVMFS5C628NLWFAFT1G is based on the modified Poole-Frenkel equation. In this equation, the current through the FET is proportional to the applied voltage, and is determined by the electric field strength within the physical channel connecting the source and drain terminals. This electric field strength is then modulated by the gate-to-source voltage, which can be used to control the current flowing through the FET.

NVMFS5C628NLWFAFT1G is a single-channel MOSFET that is used in a wide variety of applications. Common applications for this device include high frequency amplifiers, signal switching, power amplifiers, and power switches. Due to its low resistance, high gain, and wide range of operating voltages, this device is well-suited for signal processing and power management applications. Additionally, because this device is built using advanced semiconductor technology, it is capable of operating at very high frequencies. For these reasons, NVMFS5C628NLWFAFT1G continues to be a popular choice for many electronic systems.

In conclusion, NVMFS5C628NLWFAFT1G is a single-channel MOSFET that is used in a wide range of applications. Its working principle is based on the modified Poole-Frenkel equation, in which the current through the FET is proportional to the applied voltage, and is determined by the electric field strength within the physical channel connecting the source and drain terminals. This electric field strength is modulated by the gate-to-source voltage, allowing for precise current control. Due to its versatility and reliability, NVMFS5C628NLWFAFT1G is a popular choice for many electronic systems.

The specific data is subject to PDF, and the above content is for reference