NVMFS5C404NT3G Allicdata Electronics
Allicdata Part #:

NVMFS5C404NT3G-ND

Manufacturer Part#:

NVMFS5C404NT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 49A SO8FL
More Detail: N-Channel 40V 53A (Ta), 378A (Tc) 3.9W (Ta), 200W ...
DataSheet: NVMFS5C404NT3G datasheetNVMFS5C404NT3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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NVMFS5C404NT3G is one of the leading products from Texas Instruments. It primarily belongs to the family of single MOSFETs. It is a transverse field effect transistor (TFET) and operates as an enhancement mode device.

The NVMFS5C404NT3G is an n-type MOSFET that is mainly used in buffer amplifiers and low voltage switches.The device has an easy to use gate threshold voltage and low on-state resistance. It has been constructed on a planar epitaxial process and the operating temperature range is between - 55°C and 150°C. The NVMFS5C404NT3G also offers superior drain breakdown voltage, low gate leakage current, and high avalanche energy.

The NVMFS5C404NT3G is typically used as an on-off switch in an application. A voltage is applied to the gate of the MOSFET and it will then either turn on the connection or turn it off, depending on the voltage polarity. If the voltage is above the threshold voltage of 4V, then the connection will turn on; otherwise, the connection will remain in the off state. The source and drain of the MOSFET are used to connect the device to the other components in the circuit. To increase the switching speed of the connection, then the threshold voltage can be adjusted. The NVMFS5C404NT3G also features a low on-state resistance which improves the switching speed of the connection.

The NVMFS5C404NT3G is a popular device owing to its low operating temperature and superior drain breakdown voltage. It is commonly used in communication devices and low-voltage circuits. It is mainly used in audio amplifiers, power supplies, voltage regulators, digital-to-analog converters, and low-noise amplifiers.

The operation of the NVMFS5C404NT3G is based on the conductivity modulation mechanism. Under normal conditions, the device will act as an open switch, allowing current to flow through the channel. The gate of the device is used to control the channel current. When a voltage is applied to the gate, the conductivity of the channel will be modified and the current will be modulated. The other two terminals are connected to the source and drain of the device, which is used to control the flow of current through the channel.

The NVMFS5C404NT3G is a reliable and efficient device that can be used in a wide range of applications. It is an excellent choice for buffer amplifiers, low-voltage switches, voltage regulators, and communication devices. The device offers superior switching speeds, low power consumption, and excellent drain breakdown voltage.

The specific data is subject to PDF, and the above content is for reference

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