NVMFS5C410NT1G Allicdata Electronics
Allicdata Part #:

NVMFS5C410NT1G-ND

Manufacturer Part#:

NVMFS5C410NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V SO8FL
More Detail: N-Channel 40V 3.9W (Ta), 166W (Tc) Surface Mount ...
DataSheet: NVMFS5C410NT1G datasheetNVMFS5C410NT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 0.92 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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NVM5C410NT1G is a type of power MOSFET and is commonly used in electronic equipment. It is a single-chip device, with a Drain-Source Breakdown Voltage of 50V, a Drain-Source On-Resistance of 2.0mΩ, and a Gate Threshold Voltage of 4.4V. The device is made up of a silicon substrate, gate oxide layer, gate polysilicon, source, drain and an isolation oxide layer with an aluminium gate top surface. It is designed to provide high voltage, low current conduction with high thermal stability.

The NVM5C410NT1G operates similarly to other power MOSFETs. The device consists of a three-layer structure where the channel region is sandwiched between the drain and source. A positive voltage between the gate and source causes a current to flow through the channel, thus allowing current to pass between the drain and source. When the gate voltage is reduced below a given threshold voltage, the channel becomes depleted of electrons and the current is reduced.

The NVM5C410NT1G is primarily used in power switching and switching regulator applications. It can be used to control the flow of current from a power source to an electronic load, such as a lighting system. It can also be used in a converter circuit to control the current flow between an input voltage and an output voltage. Additionally, the device can be used in the switching of high load current, such as a motor or servo.

The NVM5C410NT1G is also capable of being driven directly by a microcontroller or digital signal processor. It can be used in power distribution applications, where it is capable of switching large loads at very fast speeds. Additionally, it can be used as a voltage-level converter, as it is capable of regulating the input voltage to a desired output voltage.

The NVM5C410NT1G has many benefits. It is simple to use and is easily identifiable on a circuit schematic. It is very reliable and exhibits excellent thermal efficiency. Additionally, it is very cost effective, making it an attractive choice for consumer electronics.

In summary, the NVM5C410NT1G is a power MOSFET that is used for power switching and voltage-level conversions. It is capable of controlling current between a power source and an electronic load, as well as providing fast switching of high load current. It is reliable, thermally efficient, and cost effective. It is a popular choice for consumer electronics due to its ease of use and affordability.

The specific data is subject to PDF, and the above content is for reference

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