Allicdata Part #: | NVMFS5C410NT3G-ND |
Manufacturer Part#: |
NVMFS5C410NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.9W (Ta), 166W (Tc) Surface Mount ... |
DataSheet: | NVMFS5C410NT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 166W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 0.92 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C410NT3G is a type of single N-channel MOSFET, or metal-oxide-semiconductor field-effect transistor, which is a type of transistor widely used in a variety of applications.
MOSFETs are a type of transistor made up of two conducting electrodes, known as a gate and a source, and a semiconductor material which lies between them. The gate is the barrier which controls the flow of electrons through the semiconductor material and is used to control current or voltage within a circuit. The source is where electrons enter the conduction channel and the drain is where they leave it.
The NVMFS5C410NT3G is specifically designed for high-frequency switching applications, making it ideal for use in power amplifiers, rectifiers, and power electronic circuits. It has a drain-source voltage of 110V and a maximum operating temperature of 200°C. It also has low on-resistance, making it well-suited for high-speed switching applications.
To understand how this type of MOSFET works, it is important to understand the working principle of the MOSFET itself. MOSFETs operate using the principle of field effect control. In a MOSFET, the gate terminal acts as an electric field, created by the voltage of the power source that is being used. This electric field then affects the current flow through the channel of the MOSFET. Depending on the voltage that is applied, the MOSFET can either be turned ‘on’ or ‘off’. When the voltage applied to the gate is low, the channel is in the ‘off’ mode; meaning it is blocking the conduction of electrons through it. Once the voltage applied to the gate is increased, it will switch to the ‘on’ mode, allowing electrons to flow through it.
When the NVMFS5C410NT3G is in the ‘on’ mode, it has a very low drain-source resistance, meaning that it has very low power dissipation. This makes it ideal for high frequency and high power applications. Its low on-resistance and high switching speed also make it well-suited for high-speed switching applications, such as inverters, power converters and frequency converters. Furthermore, the NVMFS5C410NT3G can also be used in power amplifiers, power electronics and rectifiers, making it an incredibly versatile device.
The NVMFS5C410NT3G is an incredibly versatile device due to its high switching speeds and low on-resistance. It is used in a variety of applications, ranging from high frequency switching, power amplifiers and rectifiers, to power electronics and frequency converters. Its wide operating temperature range, and low power dissipation make it well-suited for a variety of applications that require high speed or low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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