NVMFS5C423NLWFT1G

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NVMFS5C423NLWFT1G is a n-channel enhancement-type vertical double diffused metal oxide semiconductor field effect transistor (MOSFET) with low on-resistance and exceptionally low gate charge. It has a wide range of applications, depending on its small size, high current capacity, and high switching capability.

Application Field

NVMFS5C423NLWFT1G is a high-performance vertical double diffused MOSFET ideal for use in applications requiring low on-resistance and ultra-low gate charge. Its design is optimized for devices with low voltage, high current, and high switching speed. Typical application fields of NVMFS5C423NLWFT1G include switching, DC-DC converters, ON/OFF control, and power management circuits.

Due to its high switching frequency, this MOSFET allows designers to achieve fast switching time while still operating at low levels of power dissipation. The low gate charge minimizes switching losses, enabling efficient operation of the device. It is also designed to handle high voltage and current in various applications without compromising performance.

In addition, it is also used in electronic circuits such as solar panels, automotive lighting, LED displays, LED lighting, LED backlighting, and LCD displays. Due to its low on-resistance and high switching speed, it is able to provide strong and reliable switching capabilities. In addition, the wide operating temperature range and excellent electrical properties make it suitable for use in many applications.

Working Principle

The NVMFS5C423NLWFT1G is a vertical double diffused MOSFET, which means that its source, drain, and gate terminals are arranged vertically in a stack configuration. The device is operated by a voltage applied across its gate and source, with the gate serving as the control terminal and the source representing the input terminal. When a negative voltage is applied across the gate, it causes the transistor to open, allowing current to flow between the source and drain terminal.

When the gate voltage is made positive, the transistor is closed and the current flow is blocked between the source and drain terminals. The device also has a built-in body diode, which allows a reverse current flow to pass through the device when the gate voltage is removed. The on-resistance of the device is determined by the gate voltage and its size.

The NVMFS5C423NLWFT1G\'s exceptional low gate charge is determined by its optimal design that includes an ultrathin gate oxide and an optimized epitaxial layer. This enables the device to maintain a low gate charge even at high voltages. The device is also designed for low power dissipation, low gate charge, and low on-resistance. In addition, the device is equipped with an interlocking dielectric layer that prevents shorting of the gate to the drain.

The unique combination of features makes the NVMFS5C423NLWFT1G suitable for many applications, both as a discrete device, as well as in integrated circuits. With its low on-resistance, low gate charge and excellent electrical properties, this MOSFET is ideal for high-performance switching, DC-DC conversion, and power management.

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