NVMFS5C670NLT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS5C670NLT1GOSTR-ND |
Manufacturer Part#: |
NVMFS5C670NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 71A SO8FL |
More Detail: | N-Channel 60V 17A (Ta), 71A (Tc) 3.6W (Ta), 61W (T... |
DataSheet: | NVMFS5C670NLT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 61W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.1 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 71A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NVMFS5C670NLT1G is a single N-channel Enhancement Mode Field Effect Transistor (MOSFET). This device is suitable for use in high frequency switching applications. It can also be used in power applications utilizing synchronous rectification.
The NVMFS5C670NLT1G uses a depletion layer to control the voltage across the terminals and the power provided to the load. The drain-source terminal of the NVMFS5C670NLT1G is connected to the gate of the transistor and helps control the current that flows through the transistor.
The gate terminal is used to control the current that flows from the drain-source terminal. This terminal of the transistor is used to control the current by applying a voltage across the gate terminal. The voltage can be either positive or negative, and is used to control the flow of current to the load.
The NVMFS5C670NLT1G is well suited for use in high frequency switching applications due to its low on resistance and high speed switching. It can be used in power applications such as power management circuits, motor control circuits, and synchronous rectification.
This device is also suitable for use in power supply design and power factor correction applications. Its low on resistance and low capacitance make it ideal for use in these applications. It is commonly used as a switching element in pulse width modulation (PWM) circuits, and can be used as a speed controller in motor control applications.
The NVMFS5C670NLT1G is also used in logic circuits and other circuit designs. It is especially suited for use in high power switching applications due to its low on-state resistance and high current carrying capability. It can also be used in applications requiring high speed switching, such as in data bus applications.
The NVMFS5C670NLT1G is designed to provide superior performance and reliability. It has a low threshold voltage and low gate charge, making it an ideal choice for use in high frequency applications. It is also very efficient and is capable of providing low power consumption in switching applications.
The NVMFS5C670NLT1G is a reliable and efficient device that is well suited for a wide range of applications. It is capable of providing superior performance, reliability, and efficiency when used in high frequency switching applications, power management circuits, and power supply design.
The specific data is subject to PDF, and the above content is for reference
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