Allicdata Part #: | NVMFS5C426NAFT3G-ND |
Manufacturer Part#: |
NVMFS5C426NAFT3G |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 41A 235A 5DFN |
More Detail: | N-Channel 40V 41A (Ta), 235A (Tc) 3.8W (Ta), 128W ... |
DataSheet: | NVMFS5C426NAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.47187 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 41A (Ta), 235A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS5C426NAFT3G is a P-Channel 20-V (D-S) 77A (Tc) TSSOP-8 MOSFET device, it stands for surface mount, plastic-encapsulated, N-Channel MOSFET. NVMFS5C426NAFT3G is designed with high dV/dt, low RDS(ON) and low gate charge that makes it ideal for applications in the industrial, automotive and consumer electronics sectors. The main applications of this device are switching mode power supply (SMPS), polarity protection and DC-DC converter. It also used to replace the obsolete bipolar transistors. Moreover, this device operates from -55 to 125 degrees Celsius.
The NVMFS5C426NAFT3G is a type of MOSFET that is used to switch medium power loads such as relays, motors and LEDs. It is composed of a P-type material and two electrical contacts, a source and a drain. MOSFETs are used in a wide range of applications due to the high input impedance of the gate and the low voltage drop they have when they are opened. The use of MOSFETs reduces losses due to their ability to handle larger currents than standard transistors. The NVMFS5C426NAFT3G is available in a TSSOP-8 package, which utilizes surface mount technology to reduce parasitic elements on the device.
The working principle of NVMFS5C426NAFT3G is to use the gate voltage to control the flow of the current between the source and the drain. The voltage applied to the gate must be greater than the threshold voltage; usually this is between 4 and 5V. Once the gate voltage is greater than the threshold voltage, the MOSFET will ‘open’, allowing current to flow from the source to the drain. The resistance of the device (Rdson) will determine the amount of current that can flow. As thegate voltage is increased, the MOSFET will continue to ‘open’ and the amount of current flowing from the source to the drain will increase.
dThe NVMFS5C426NAFT3G has a variety of benefits over other types of transistors and MOSFETs. For example, it possesses a low threshold voltage and a low Rdson that enables it to operate efficiently and with a high level of control. Additionally, the NVMFS5C426NAFT3G has a low gate capacitance and low charge that make it suitable for switching applications ranging from 10kHz to 1MHz. It also has an extended temperature range that allows it to withstand temperatures up to 125 degrees Celsius.
Furthermore, the NVMFS5C426NAFT3G provides an easy to use and cost effective solution for power management and switching. With its small form factor and easy to use surface mount technology, it is an ideal choice for a wide range of applications. It is also extensively used for polarity protection, motor controls, and defect logic, combinational logic and DC-DC conversions.
In conclusion, the NVMFS5C426NAFT3G MOSFET is a power transistor that is widely used in various applications due to its low RDS(ON), excellent switching speed, low gate charge and low threshold voltage. It is suitable for use in industrial, automotive and consumer applications. Additionally, it can be used to replace obsolete bipolar transistors, and its extended temperature range allows it to be used even in extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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