NVMFD5485NLWFT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	5.3A
Rds On (Max) @ Id, Vgs:	44 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	560pF @ 25V
Power - Max:	2.9W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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Introduction to NVMFD5485NLWFT1G

The NVMFD5485NLWFT1G is a newer type of Field Effect Transistor (FET) array specifically designed for high performance applications. It is fabricated using a cutting-edge Non-Volatile Memory Fabrication process, resulting in an incredibly powerful FET array.

Application Field & Working Principle

The NVMFD5485NLWFT1G is designed for applications that require a high level of integration and low power consumption, such as video processing, signal amplification, and imaging. It is ideal for applications seeking a high level of performance and reliability.Its working principle is based on the modulation of electrical current using a gate source terminal. This determines how much current flows through the FET array. Additionally, it can be used as a variable voltage source, where the amount of current flowing is adjusted by varying the gate voltage.The principle advantage of the NVMFD5485NLWFT1G is its use of Non-Volatile Memory Fabrication. This process allows the device to operate with a much reduced footprint while still providing excellent performance. Additionally, the NVMFD5485NLWFT1G provides high levels of performance with low power draw and has low total harmonic distortion.

Features of the NVMFD5485NLWFT1G

The NVMFD5485NLWFT1G features a wide operating temperature range and is able to function in temperatures ranging from -55°C to 150°C. Additionally, its high dielectric strength allows it to operate up to 8x faster than other conventional FET arrays. Furthermore, its specially designed self-limiting structure prevents it from overheating, which further increases its performance and reliability.Other features of the NVMFD5485NLWFT1G include its low voltage threshold, high current capability, and its ability to operate over a wide voltage range. It also provides high noise immunity, allowing it to perform consistently in noisy industrial applications. Lastly, it features a low on-resistance when compared to other FET arrays.

Conclusion

The NVMFD5485NLWFT1G is a powerful Field Effect Transistor (FET) array specifically designed for applications requiring high integration, low power consumption, and low total harmonic distortion. Its Non-Volatile Memory Fabrication process allows it to operate with a much reduced footprint while providing excellent performance and reliability. Additionally, it features a wide operating temperature range, high dielectric strength, a low voltage threshold, and high current capability. It is perfect for applications such as video processing, signal amplification, and imaging and is an ideal choice for those seeking a high level of performance and reliability.

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