| Allicdata Part #: | NVMFD5485NLWFT3G-ND |
| Manufacturer Part#: |
NVMFD5485NLWFT3G |
| Price: | $ 0.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2N-CH 60V 5.3A DFN8 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 5.3A 2.9W Surf... |
| DataSheet: |  NVMFD5485NLWFT3G Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.53187 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 5.3A |
| Rds On (Max) @ Id, Vgs: | 44 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 25V |
| Power - Max: | 2.9W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Description
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The NVMFD5485NLWFT3G is an array of advanced Field-Effect Transistors (FETs) sometime referred to as MOSFETs, which are typically used in power electronics applications. The NVMFD5485NLWFT3G is particularly advantageous in that it offers improved switching performance, improved power dissipation and improved noise immunity when compared to equivalent alternative technologies on the market.In this article, we will discuss the application fields and working principle of the NVMFD5485NLWFT3G.
Application Fields of NVMFD5485NLWFT3G
The NVMFD5485NLWFT3G is well suited for various power electronics applications, such as motor drives and power supplies. The array\'s robustness and improved switching performance allow it to be used in these applications without the concern for damage or reduced performance due to temperature variations or power surges. It is also suitable for high-voltage applications and is often used in extremely harsh environments, where other technologies would fail.In addition, the array\'s improved power dissipation makes it suitable for use in high-power applications, such as ultrasonic cleaning and high-voltage discharge applications. Finally, it can be used in automotive and aerospace applications, due to its improved noise immunity and increased reliability.Working Principle of NVMFD5485NLWFT3G
The NVMFD5485NLWFT3G utilizes an array of FETs, which are sometimes referred to as MOSFETs. FETs are three-terminal devices, with a gate, source and drain. The gate is controlled by an externally applied voltage and the flow of current between the source and the drain is dependent on the gate voltage.The NVMFD5485NLWFT3G is a specially designed array of FETs, which offers improved switching performance when compared to other FET technologies available on the market. The robust design of this array, which incorporates several innovative technologies, allows it to efficiently dissipate the power generated by the switching actions, improve the noise immunity and offer improved reliability in harsh environmental conditions.Conclusion
The NVMFD5485NLWFT3G is an array of advanced Field-Effect Transistors (FETs) sometimes referred to as MOSFETs, which is well suited for power electronics applications, such as motor drives and power supplies. The robustness and improved switching performance of the array, coupled with its improved power dissipation, noise immunity and increased reliability, make it suitable for high-voltage and automotive applications and for use in harsh environments.The specific data is subject to PDF, and the above content is for reference
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