NVMFD5489NLT3G

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NVMFD5489NLT3G is a trapezoidally shaped, Trench MOSFET array with the ability to control high current drain and low drain-to-source on resistance. The device consists of eight N-channel enhancement mode MOS transistors, each individually connected to a source and a gate within the array. This array of MOSFETs is a high-speed switching device with a configuration that increases its current carrying capacity.

When currents flow between the drain terminals and the source terminals of the NVMFD5489NLT3G the decrease in drain-to-source on resistance will increase current flow. Conversely when currents stop flowing the drain-to-source on resistance will increase back to its original state. To further make it efficient, this array facilitates the operation of the two channels in a different way.

The source to source wiring of the NVMFD5489NLT3G allows for the use of the two channels to be connected in complementary fashion. This way, the device\'s current carrying capacity will increase and it will benefit from a headroom of transistors due to the reduced on resistance. This means that the device is more efficient when it is used to reduce power consumption. It helps to minimize Heat losses as the transistor can dissipate heat more efficiently due to its high capacity.

The NVMFD5489NLT3G has a wide variety of applications and is used in many industries such as automotive, consumer electronics, medical, power, telecommunications and many others. In terms of automotive, it can be used for controlling headlamp, blower motor and fuel injection system. It can also be used to control motor speed in consumer electronics and as a current source in medical equipment. Furthermore, it can be used to as a switch in power converters and/or as a power multiplier in telecommunications equipment.

The main advantage of the NVMFD5489NLT3G is that it operates with a high-speed switching device with a low RON. This enables it to switch a large current and efficiently dissipate the heated power faster thus providing power savings, cost savings and safety. Furthermore, due to its ability to reduce power consumption, it reduces operational losses, improves system lifetime and increases device life cycle.

In conclusion, the NVMFD5489NLT3G\'s low RON, its wide range of applications, its unique source-to-source wiring and its high efficiency make it an effective device in many applications. It\'s vast use in the industry and its high quality construction make it the choice for those looking for a reliable, high quality switching device array.

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