NVMFD5873NLT1G Discrete Semiconductor Products

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NVMFD5873NLT1G is a dual N-channel, logic-level, Enhancement-mode, Metal-oxide semiconductor (MOSFET) transistor array. It has a maximum drain-source voltage of ± 25 volts and a maximum of 10A peak drain current. Its RDS on is 0.0067 ohm, making it ideal for high-frequency switching applications. NVMFD5873NLT1G is part of the N-channel MOSFET family from ON Semiconductor, providing embedded systems designers with solution that can meet their heat and wattage requirements while improving their systems’ performance.

A MOSFET array is an integrated circuit that contains multiple MOSFETs, which are semiconductor devices used to control the flow of electrons in a circuit. In this case, the NVMFD5873NLT1G contains two N-channel MOSFETs packed in a single 8-pin 600 mil Di-Pak package. The package has tiny lead-fingers on the bottom and can be mounted directly onto the printed circuit board. The NVMFD5873NLT1G can be used in a variety of Industrial and Automotive Electronics applications.

MOSFETs are like switches, which means they can either allow current to flow through them or block current from passing through. This is because their main function is to act as electronic switches to control the flow of electrons in a circuit. They have a gate, which can be compared to a switch, and relies on voltage in order to activate it. When the voltage applied to the gate meets the threshold voltage, the N-channel MOSFET turns on, allowing electrons to flow through. When the voltage is decreased, the MOSFET turns off, blocking the current from passing through.

The NVMFD5873NLT1G has a maximum drain-source voltage of ± 25 volts and a maximum of 10A peak drain current. It also has an incredibly low on-resistance of 0.0067 ohm and a rise time of 140nS. Its low on-resistance makes the NVMFD5873NLT1G ideal for high-frequency switching applications, such as power supplies and DC-DC converters. The NVMFD5873NLT1G also exhibits excellent thermal behavior, providing superior thermal and power cycling performance.

The NVMFD5873NLT1G has low thermal resistance and can operate over an extended range of temperatures, ranging from -55°C to +150°C. Its superior thermal cycling and power cycling performance ensures that it can handle higher voltage spikes and transient power dissipation. This makes it particularly well suited for automotive applications, which require components to operate reliably in extreme temperature conditions.

The NVMFD5873NLT1G MOSFET array is a cost-effective solution for embedded system designers, providing them with advanced features, such as superior thermal and power cycling performance, a low on-resistance, and a wide temperature range operation. Its low thermal resistance and excellent thermal cycling performance makes it ideal for automotive and industrial applications, where reliability and durability are paramount.

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