Allicdata Part #: | NVMFD5877NLWFT3G-ND |
Manufacturer Part#: |
NVMFD5877NLWFT3G |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 60V 6A SO8FL |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surfac... |
DataSheet: | NVMFD5877NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.26604 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 25V |
Power - Max: | 3.2W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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NVMFD5877NLWFT3G Arrays, found in transistors and MOSFETs, are a type of electronic component that allows for the switching of current. Arrays typically consist of multiple MOSFETs which are integrated with multiple matching gate drivers, allowing for current to be switched on and off quickly. This type of device is used in a wide range of applications, from automotive control systems to industrial instrumentation and control systems.
MOSFETs (Metal-Oxide Semiconductor Field Effect Transistors) are transistors that are controlled with either an external voltage source or an internal voltage source. MOSFETs utilize a conductive metal gate which can be programed using either a direct or an indirect control source. The gate controls the current flowing through the transistor, allowing for the current to be raised or lowered when necessary. This type of control method is important for applications that require precise control over the current, such as automotive control and instrumentation.
An NVMFD5877NLWFT3G Array is composed of multiple MOSFETs that are integrated with matching gate drivers. This device is typically used for power management applications, as the integrated gate driver allows for faster switching and better control over the current. The device also utilizes a precise voltage regulation, allowing for precise control over the power output. In addition, the multiple MOSFETs integrated with the device also offer enhanced power handling characteristics, allowing for higher current levels to be managed without compromising the data transfer rates.
The NVMFD5877NLWFT3G Array utilizes a wide variety of different technologies, such as advanced packaging technologies, proprietary memory architectures, and flexible switching algorithms. Additionally, the device includes integrated thermal management and fault protection features, which allow for the device to be used safely in a variety of applications. The device is typically used in automotive control systems, industrial instrumentation and control systems, and a variety of other industrial and consumer electronics applications.
The NVMFD5877NLWFT3G arrays have a wide range of features, making them ideal for a variety of applications. One of the primary features of the device is its low power consumption, as it utilizes advanced power management and switching algorithms which allow for high efficiency and minimal power consumption. In addition, the device also offers a wide range of different programmable parameters that can be adjusted to meet the specific requirements of the application. Finally, the device offers a high level of reliability and quality, offering extended operation times, high accuracy, and long life.
In conclusion, the NVMFD5877NLWFT3G Arrays are a type of transistor array that are used in power management applications. The device utilizes advanced packaging technologies, proprietary memory architectures, and flexible switching algorithms to provide efficient and precise control over the power output. In addition, the device also offers robust thermal management and fault protection features, ensuring that the device is ready to work in a variety of applications. Finally, the device offers a high level of reliability and quality, offering extended operation times, high accuracy, and long life.
The specific data is subject to PDF, and the above content is for reference
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