NVMFD5C446NT1G Discrete Semiconductor Products

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The NVMFD5C446NT1G is an array of 4 dual N-Channel enhancement mode power MOSFETs that have been monolithically integrated onto a single chip. It contains 8 independent MOSFETs that are ideal for a wide range of applications such as power control, motor controller, and high frequency switching.

Application Field

The NVMFD5C446NT1G is designed to provide high performance in power control applications. It is commonly used in DC/DC converters,brushless DC motor drivers, automotive DC/DC converters, and high-frequency inverters. Additionally, it can be used in battery powered systems due to its low switching losses and very low RDS(on).

With its high power switching density and low on-resistance, the NVMFD5C446NT1G is suitable for power management applications. It can be used for a variety of power management circuits, such as AC/DC converters, DC/DC converters, phase-shift controllable ballasts, power switches and dc/dc convertors. The NVMFD5C446NT1G is also well suited for automotive applications such as high frequency inverters, ECUs, AC amplifiers, and SMPS.

Working Principle

The NVMFD5C446NT1G is a depletion-mode MOSFET array with 8 individually controlled channels. It is designed to operate as a high-voltage, high-current switch with an operating voltage range of up to 1200 V. Each channel contains a N-channel MOSFET with a rated current of 45 A and an on-resistance of 3.2 mΩ(max).

The NVMFD5C446NT1G is operated by applying a gate voltage between the gate pin and the source pin. The gate voltage must be applied to the specified gate-to-source voltage associated with a given channel. The specified gate-to-source voltage is determined by the device\'s design parameters, such as the gate capacitance, gate-to-source resistance, channel body diode forward voltage, etc. When the gate voltage is applied, the gate capacitance is charged, allowing the gate-to-drain voltage to drop, and thus turn on the MOSFET channel. The channel can be turned on/off by sufficiently increasing/decreasing the gate voltage, respectively.

The NVMFD5C446NT1G also features a body diode connected between the source and drain. When the channel body diode is forward-biased and the drain-to-source voltage becomes negative, the body diode will conduct, thus providing protection from voltage spikes. The body diode also helps to minimize RDS(on) when the device is operating in high frequency switching applications.

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