NVMFD5C650NLWFT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NVMFD5C650NLWFT1G is an Array of N-Channel Enhancement Mode Trench Field-Effect Transistors (FETs). It is specifically designed for use in PWM power management applications such as motor control, high-efficiency air conditioner or UPS inverter control, and is optimized for low-frequency power motor control applications up to 1kHz. It offers superior transient response and superior avalanche performance compared to other conventional FETs.

The NVMFD5C650NLWFT1G features dual-gate array planar trench FETs with a triangular configuration, providing immunity to latch-up, low on-resistance, and superior performance in dip applications. The NVMFD5C650NLWFT1G offers superior performance and higher drain-source current capability than its competitors, making it an excellent choice for a variety of power applications. It is available in a thermally-enhanced SOT-223 package with an isolation rating of 150V.

The NVMFD5C650NLWFT1G is designed with an integrated resistor-capacitor (RC) network between the source and drain for fast response times. The RC network helps reduce transient current surges, providing superior thermal properties and better noise immunity. Additionally, the NVMFD5C650NLWFT1G comes with a built-in electrostatic discharge (ESD) protection circuit to protect the device from voltage surges.

It is ideal for use in applications such as high-side power distribution, HVAC control, motor drive, lighting controls, and general power switching. The device’s miniature package also makes it suitable for compact designs. The NVMFD5C650NLWFT1G is designed to provide superior performance and reliability with a low on-resistance and fast switching capabilities, making it ideal for power management applications.

The working principle of the NVMFD5C650NLWFT1G is the same as that of other FETs. It consists of a gate, source, and drain, which are used to regulate the flow of current. By applying a voltage to the gate, the source can be “opened” or “closed” to allow or block current from flowing from the drain to the source. The threshold voltage of the device determines when it is “on” or “off”, and the on-resistance is the amount of resistance the device presents when it is “on”.

The NVMFD5C650NLWFT1G is an excellent choice for power management applications. It features an integrated RC network and built-in ESD protection, a low on-resistance, and fast switching capabilities. Its small package size and excellent performance are ideal for compact designs. The device is well-suited for use in high-side power distribution, motor control, HVAC control, lighting controls, and general power switching applications.

The specific data is subject to PDF, and the above content is for reference