NVMFD5C672NLT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NVMFD5C672NLT1G are MOSFETs commonly used for power switching applications. The name of this MOSFET stands for Non-Volatile Metal Oxide Semiconductor Field Effect Transistor and is often used for logic level switching. It is an enhancement device so to turn it on, a gate voltage greater than the source voltage must be applied.

The basic construction of a MOSFET is composed of a metal gate, a source and a drain terminal. Between the metal gate and the source and drain terminals there are insulating layers. A voltage applied across the metal gate and the source allows electrons to flow through the drain to the source, thus turning on the device. If the voltage applied across the metal gate and the source drainage is reversed, then the device turns off. As the voltage applied to the metal gate increases, the current flow through the drain increases. This is why it is used in many different applications as a switch. It can switch on and off signals quickly and easily.

The NVMFD5C672NLT1G is an innovative design which offers excellent on-state characteristics along with low gate-to-source and gate-to-drainleakage currents. This makes it an ideal device for switching applications. It is available in a number of packages including SOT-23, P-DIP and SOIC. In addition, this MOSFET is rated up to 0.5A and 20V and can handle up to -55°C to +150°C.

The NVMFD5C672NLT1G MOSFET arrays are an excellent choice for those MCUs, DSPs or other control systems that need to switch and manage the power supply of each regulated circuit, as it offers excellent low-on resistance and replaces traditional discrete components with an integrated, single device. The NVMFD5C672NLT1G MOSFET also provides improved efficiency, superior signal isolation, and noise isolation as it acts as a voltage and current isolator. This makes it ideal for switching applications in automotive and industrial control systems.

The NVMFD5C672NLT1G can also be used in DC/DC converters and push-pull converters. Its low on-resistance and low gate threshold voltage make it ideal for switching applications and its low gate-to-source and gate-to-drain leakage currents ensures that it operates reliably over a wide range of voltages and switching frequencies. Additionally, the NVMFD5C672NLT1G is highly stable with temperature and can handle up to 20V.

In conclusion, the NVMFD5C672NLT1G is an excellent choice for power switching applications as it offers high on-state characteristics, low gate-to-source and gate-to-drain leakage currents, low on-resistance and low gate threshold voltage. It is also highly stable for a wide range of voltages and switching frequencies and is highly reliable in operation. As a result, it is an ideal choice for automotive and industrial control systems and for use in DC/DC and push-pull converters.

The specific data is subject to PDF, and the above content is for reference