NVMFD5C672NLWFT1G Discrete Semiconductor Products

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NVMFD5C672NLWFT1G, renowned today as a new generation of low-voltage low-actuation-threshold field-effect transistors (FET), is widely deployed in many electronic components, such as electronic rectifiers, amplifiers, frequency multipliers, switches and logic gates. This transistor is especially useful in industries where robustness and low-power consumption are highly desired.

History

Developed by a joint venture by NTE Power and Motorola in the late 1990s, NVMFD5C672NLWFT1G was the first low-threshold FET to be engineered with a dual-gate, multiple-gate geometry in order to reduce leakage current and power consumption. This new form of technology allowed the FET to provide exceptional levels of robustness, making it widely applicable in various industrial and consumer electronics markets.

Application Field

NVMFD5C672NLWFT1G is deployed in many application fields, such as industrial audio, medical, automotive and mobile communication devices. It is also widely deployed in portable power supplies, robotics, GPS devices and communication products.

Working Principle

NVMFD5C672NLWFT1G operates on the principle of four-terminal and three-terminal static field-effect transistors (FET). It is comprised of a solid, dielectric-insulated, metal-oxide semiconductor (MOS) structure that consists of an n-type drain, p-type body and n-type source.

The NVMFD5C672NLWFT1G\'s dual-gate structure involves two gates: an access gate and a control gate. The access gate is typically used to adjust the current flowing through the device, while the control gate is typically used to turn the transistor on or off.

When in the "off" state, the transistor\'s gate-source voltage (VGS) is below the threshold voltage. In this state, the transistor acts as an open switch, with no current flowing between the drain and the source, and no voltage developed across the load. In the "on" state, the VGS exceeds the threshold voltage, allowing current to flow from the drain to the source, which then drives the load.

Conclusion

The NVMFD5C672NLWFT1G is a modern field-effect transistor (FET) suitable for use in many application fields. Its dual-gate structure minimizes power consumption and leakage current, while its new low-actuation-threshold technology provides exceptional levels of robustness. Its four-terminal and three-terminal static FET architecture allows it to operate as a switch, enabling current to flow across the drain and source when the gate-source voltage is above the threshold voltage.

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