NVTFS4824NTAG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WDFN (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 21W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1740pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	4.7 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	18.2A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The NVTFS4824NTAG is a Field Effect Transistor (FET) or Metal Oxide Semiconductor FET (MOSFET) that is commonly used in many industrial and commercial applications. It is built around an N-channel depletion mode FET with a smaller die size than comparable devices. This FET combines the benefits of both an enhancement mode FET and a depletion mode FET, allowing it to be used in a variety of different applications.

Applications

The NVTFS4824NTAG is suited for a variety of applications, such as high speed switching and analog applications. It can be used for AC and DC switching, as well as for both low-power and high-power applications. Additionally, it is also useful for more specialized uses such as RFID and Low-noise Amplifier (LNA) circuits, which require high speed switching.The FET is also well-suited for power amplifier circuits, motor control circuits, and load switches. Its low capacitance characteristics make it a great choice for AC and DC switching applications, while its low input current capabilities make it suitable for low-power applications. Additionally, its high frequency performance and fast switching speeds make it ideal for RFID and LNA circuits.

Working Principle

At the most basic level, the NVTFS4824NTAG MOSFET operates by controlling current flows through an N-channel. A High Voltage (VH) is applied to the gate of the MOSFET, which creates an electric field in the channel of the device. This electric field, in turn, attracts electron carriers from the source, which allows the current flow to be controlled.The electric field attracts and holds electrons in the channel, but the amount of current that can flow through the channel is determined by the voltage applied to the gate, which is often referred to as the "gate voltage". When the gate voltage is below the threshold voltage, it limits the amount of current that can flow through the channel, and vice versa.

Conclusion

In conclusion, the NVTFS4824NTAG MOSFET is a versatile device that can be used for AC and DC switching, as well as for power amplifier, motor control, and load switch circuits. Its small die size, low input current capabilities, and high frequency performance make it an ideal choice for a variety of applications, from low-power to high-power. Additionally, its fast-switching speeds make it ideal for RFID and LNA circuits. This FET can be used to control the current flow in an N-channel by manipulating the gate voltage.

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